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GM71V65800CJ-7 PDF预览

GM71V65800CJ-7

更新时间: 2024-09-16 23:53:51
品牌 Logo 应用领域
其他 - ETC 动态存储器
页数 文件大小 规格书
9页 93K
描述
x8 Fast Page Mode DRAM

GM71V65800CJ-7 数据手册

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GM71V65800C  
8,388,608 WORDS x 8 BIT  
CMOS DYNAMIC RAM  
Description  
Pin Configuration  
32 SOJ / TSOP II  
The GM71V65800C is the second generation  
dynamic RAM organized 8,388,608 words by 8  
bits. The GM71V65800C utilizes 0.35um  
CMOS Silicon Gate Process Technology as well  
as advanced circuit techniques for wide  
operating margins, both internally and to the  
system user. System oriented features include  
single power supply of 3.3V+/- 0.3V tolerance,  
direct interfacing capability with high  
performance logic families such as Schottky  
TTL.  
1
2
3
32  
V
SS  
V
CC  
31  
30  
I/O7  
I/O6  
I/O5  
I/O4  
I/O0  
I/O1  
I/O2  
I/O3  
NC  
4
5
6
7
29  
28  
27  
26  
V
SS  
V
CC  
CAS  
8
9
25  
24  
OE  
NC  
WE  
RAS  
A0  
The GM71V65800C offers Fast Page Mode as  
a high speed access mode.  
10  
23  
A11  
11  
12  
22 A10  
A1  
A2  
A3  
A9  
A8  
21  
20  
Features  
13  
14  
15  
• 8,388,604 Words x 8 Bit  
• Fast Page Mode Capability  
• Fast Access Time & Cycle Time  
A4  
A5  
19  
18  
A7  
A6  
17  
16  
V
SS  
V
CC  
(Unit: ns)  
t
RAC  
t
AA  
t
CAC  
t
RC  
t
PC  
(Top View)  
90  
110  
130  
35  
40  
45  
50  
60  
70  
25  
30  
35  
13  
15  
GM71V65800C-5  
GM71V65800C-6  
18  
GM71V65800C-7  
• Low Power  
- Active : 522 mW / 450 mW / 360 mW (MAX)  
- Standby : 3.6 mW ( CMOS level :MAX )  
• RAS Only Refresh, CAS before RAS Refresh,  
Hidden Refresh Capability  
• LVTTL  
• 4096 Refresh Cycles/64 ms  
• Single Power Supply of 3.3V+/- 0.3V  
with a built-in VBB generator  
* This Data Sheet is subject to change without notice.  
Rev 0.1 / Apr’01  

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