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GM71V65163AT-5 PDF预览

GM71V65163AT-5

更新时间: 2024-02-21 06:57:31
品牌 Logo 应用领域
其他 - ETC 动态存储器
页数 文件大小 规格书
24页 397K
描述
x16 EDO Page Mode DRAM

GM71V65163AT-5 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:TSOP, TSOP50,.46,32Reach Compliance Code:compliant
风险等级:5.82最长访问时间:50 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G50
JESD-609代码:e0内存密度:67108864 bit
内存集成电路类型:EDO DRAM内存宽度:16
端子数量:50字数:4194304 words
字数代码:4000000最高工作温度:70 °C
最低工作温度:组织:4MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP封装等效代码:TSOP50,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
电源:3.3 V认证状态:Not Qualified
刷新周期:4096自我刷新:NO
最大待机电流:0.0005 A子类别:DRAMs
最大压摆率:0.2 mA标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUALBase Number Matches:1

GM71V65163AT-5 数据手册

 浏览型号GM71V65163AT-5的Datasheet PDF文件第2页浏览型号GM71V65163AT-5的Datasheet PDF文件第3页浏览型号GM71V65163AT-5的Datasheet PDF文件第4页浏览型号GM71V65163AT-5的Datasheet PDF文件第6页浏览型号GM71V65163AT-5的Datasheet PDF文件第7页浏览型号GM71V65163AT-5的Datasheet PDF文件第8页 
GM71V65163A  
GM71VS65163AL  
LG Semicon  
Read Cycles  
GM71V(S)65163A/AL-6  
GM71V(S)65163A/AL-5  
Symbol  
Parameter  
Notes  
Unit  
Min  
Max  
50  
Max  
60  
Min  
§À  
§À  
-
-
-
-
Access Time from RAS  
tRAC  
CAC  
8,9  
13  
15  
Access Time from CAS  
9,10,17  
t
§À  
§À  
-
-
25  
13  
-
-
30  
15  
-
Access Time from Column Address  
Access Time from OE  
t
AA  
9,11,17  
9
t
OAC  
RCS  
0
0
§À  
§À  
§À  
§À  
§À  
0
Read Command Set-up Time  
-
21  
t
12,22  
12  
0
Read Command Hold Time to CAS  
Read Command Hold Time to RAS  
Column Address to RAS Lead Time  
Column Address to CAS Lead Time  
Output Buffer Turn-off Delay Time from CAS  
Output Buffer Turn-off Delay Time from OE  
-
-
-
-
t
RCH  
RRH  
0
0
t
30  
18  
25  
15  
-
-
-
t
RAL  
CAL  
OFF  
OEZ  
CDD  
-
t
§À  
§À  
§À  
-
13  
13  
-
-
-
15  
15  
t
13,26  
13  
-
t
13  
13  
-
-
5
CAS to DIN Delay Time  
RAS to DIN Delay Time  
15  
15  
t
§À  
-
t
RDD  
§À  
§À  
15  
-
-
-
WE to DIN Delay Time  
13  
-
t
WDD  
13,26  
13  
Output Buffer Turn-off Delay Time from RAS  
13  
13  
15  
15  
t
OFR  
§À  
§À  
§À  
tWEZ  
-
3
-
Output Buffer Turn-off Delay Time from WE  
Output Data Hold Time  
3
26  
-
-
-
-
-
-
-
-
tOH  
Output Data Hold Time from RAS  
3
3
tOHR  
26  
50  
3
§À  
§À  
§À  
Read Command Hold Time from RAS  
Output data hold time from OE  
CAS to Output in Low - Z  
60  
3
tRCHR  
-
-
t
OHO  
0
0
tCLZ  
5

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