Datasheet > GM71V64803CT-6

GM71V64803CT-6

更新时间： 2022-01-21 14:59:00

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
11页	112K
描述
x8 EDO Page Mode DRAM

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数据手册

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GM71V64803CT-6 数据手册

GM71V64803C

GM71VS64803CL

Write Cycles

GM71V(S)64803C/CL-5

GM71V(S)64803C/CL-6

Notes

Symbol

Parameter

Unit

Min

Max

WCS

WCH

RWL

CWL

Write Command Set-up Time

Write Command Hold Time

Write Command Pulse Width

Write Command to RAS Lead Time

Write Command to CAS Lead Time

Data-in Set-up Time

Data-in Hold Time

Read-Modify-Write Cycles

GM71V(S)64803C/CL-5

GM71V(S)64803C/CL-6

Notes

Symbol

Parameter

Unit

Min

116

Min

Max

140

Read-Modify-Write Cycle Time

RWC

RWD

CWD

AWD

OEH

RAS to WE Delay Time

CAS to WE Delay Time

Column Address to WE Delay Time

OE Hold Time from WE

Refresh Cycles

GM71V(S)64803C/CL-5 GM71V(S)64803C/CL-6

Notes

Symbol

Unit

Parameter

Min

Max

CAS Set-up Time

(CAS-before-RAS Refresh Cycle)

CSR

CAS Hold Time

(CAS-before-RAS Refresh Cycle)

CHR

WRP

WE setup time

(CAS-before-RAS Refresh Cycle)

WE hold time

(CAS-before-RAS Refresh Cycle)

WRH

RPC

RAS Precharge to CAS Hold Time

Rev 0.1 / Apr’01

1...3 4 567 8 9...11

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