Datasheet > GM71V64803CT-6

GM71V64803CT-6

更新时间： 2022-01-21 14:59:00

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
11页	112K
描述
x8 EDO Page Mode DRAM

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数据手册

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GM71V64803CT-6 数据手册

GM71V64803C

GM71VS64803CL

Pin Description

Function

Address Inputs

Function

A0-A12

RAS

Write Enable

I/O0 - I/O7

VCC

Data Input / Output

Power (+3.3V)

Ground

Refresh Address Inputs

Row Address Strobe

Column Address Strobe

Output Enable

VSS

CAS

No Connection

Ordering Information

Type No.

Access Time

Package

400 Mil

32Pin

Plastic SOJ

GM71V(S)64803C/CLJ-5

GM71V(S)64803C/CLJ-6

50ns

60ns

400 Mil

32Pin

Plastic TSOP II

GM71V(S)64803C/CLT-5

GM71V(S)64803C/CLT-6

50ns

60ns

Absolute Maximum Ratings*

Symbol

Parameter

Storage Temperature (Plastic)

Rating

Unit

TSTG

-55 to 125

-0.5 to VCC + 0.5

(MAX ; 4.6V)

Voltage on any Pin Relative to VSS

VCC

IOUT

Voltage on VCC Relative to VSS

Short Circuit Output Current

Power Dissipation

-0.5 to 4.6

1.0

*Note : Operation at or above Absolute Maximum Ratings can adversely affect device reliability.

Recommended DC Operating Conditions (TA = 0 ~ 70C)

Symbol

VCC

Parameter

Supply Voltage

Typ

3.3

Max

3.6

Min

3.0

Unit

Notes

1,2

VSS

Supply Voltage

Vcc+0.3

0.8

VIH

VIL

Input High Voltage

Input Low Voltage

2.0

-0.3

Ambient Temperature under Bias

Rev 0.1 / Apr’01

123 4 5 6 7...11

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