Datasheet > GM71V64803CT-6

GM71V64803CT-6

更新时间： 2022-01-21 14:59:00

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
11页	112K
描述
x8 EDO Page Mode DRAM

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GM71V64803CT-6 数据手册

GM71V64803C

GM71VS64803CL

8,388,608 WORDS x 8 BIT

CMOS DYNAMIC RAM

Description

Pin Configuration

32 SOJ / TSOP II

The GM71V(S)64803C/CL is the new generation

dynamic RAM organized 8,388,608 words by 8bits.

The GM71V(S)64803C/CL utilizes advanced CMOS

Silicon Gate Process Technology as well as

advanced circuit techniques for wide operating

margins, both internally and to the system user.

System oriented features include single power supply

of 3.3V+/-10% tolerance, direct interfacing

capability with high performance logic families such

as Schottky TTL.

31 IO7

VSS

VCC

IO0

IO1

IO2

IO3

IO6

IO5

IO4

VSS

VCC

/CAS

The GM71V(S)64803C/CL offers Extended Data

Out(EDO) Mode as a high speed access mode.

/OE

A12

/WE

/RAS

Features

23 A11

22 A10

*8,388,608 Words x 8 Bit

* Extended Data Out (EDO) Mode Capability

* Fast Access Time & Cycle Time

(Unit: ns)

RAC

CAC

tHPC

GM71V(S)64803C/CL-5

GM71V(S)64803C/CL-6

VSS

VCC

104

(Top View)

Power dissipation

- Active : 450mW/414mW(MAX)

- Standby : 1.8 mW ( CMOS level : MAX )

0.54mW ( L-Version : MAX)

*EDO page mode capability

*Access time : 50ns/60ns (max)

*Refresh cycles

- RAS only Refresh

8192 cycles/64 ms (GM71V64803C)

8192 cycles/128ms (GM71VS64803CL)(L_Version)

*CBR & Hidden Refresh

4096 cycles/64 ms (GM71V64803C)

4096 cycles/128 ms (GM71VS64803CL)( L-Version )

*4 variations of refresh

-RAS-only refresh

-CAS-before-RAS refresh

-Hidden refresh

-Self refresh (L-Version)

*Single Power Supply of 3.3V+/-10 % with a built-in VBB generator

*Battery Back Up Operation ( L-Version )

Rev 0.1 / Apr’01

12 3 4 5 6 7...11

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