Datasheet > GM157

GM157

更新时间： 2024-09-09 04:19:39

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	353K
描述
PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

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数据手册

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GM157 数据手册

ISSUED DATE :2005/08/19

REVISED DATE :

GTM

CORPORATION

GM157

P N P S I L I C O N P L A N A R H I G H P E R F O R M A N C E T R A N S I S T O R

Description

The GM157 is designed for general purpose switching and amplifier applications.

Features

Ԧ-60 Volt V_CEO

Ԧ3 Amp continuous current

ԦLow saturation voltage

Package Dimensions

SOT-89

Millimeter

REF.

Millimeter

Min. Max.

3.00 REF.

1.50 REF.

REF.

Min.

4.4

Max.

4.6

4.05

1.50

1.30

2.40

0.89

4.25

1.70

1.50

2.60

1.20

0.40

1.40

0.35

0.52

1.60

0.41

5q TYP.

0.70 REF.

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Storage Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Total Power Dissipation

Symbol

Tstg

Ratings

+150

-55~+150

-80

Unit

CBO

VCEO

-60

-5

-3

-6

EBO

1.2

Electrical Characteristics(Ta = 25к,unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-80

=-100uA , I

=-10mA, I

=-100uA ,I

CB=-60V, I

EB=-4V, I

*BVCEO

BVEBO

-60

-5

100

B=0

CBO

-100

-300

-600

-1.25

-1.0

C=0

EBO

*VCE(sat)

*VBE(sat)

*VBE(on)

-150

-450

-0.9

-0.8

200

170

150

140

=-1A, I

=-3A, I

=-1A, I

=-100mA

=-300mA

=-100mA

CE=-2V, I

CE=-5V, I

=-1A

*hFE

=-50mA

=-500mA

=-1A

300

=-2A

MHz

=-100mA, f=100MHz

CB=-10V, I =0, f=1MHz

Cob

450

CC=-10V, IC=-500mA, IB1=IB2=-50mA

off

*Measured under pulse condition. Pulse widthЉ300ꢀs, Duty CycleЉ2%

Spice parameter data is available upon request for this device.

GM157

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