Datasheet > GM162

GM162

更新时间： 2024-09-09 04:19:39

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	365K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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中文翻译

获取价格

数据手册

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GM162 数据手册

ISSUED DATE :2004/11/01

REVISED DATE :

GTM

CORPORATION

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

BVDSS

-30V

GM162

DS(ON) 80mΩ

-3.2A

Description

The GM162 provides the designer with the best combination of fast switching, low on-resistance and

cost-effectiveness.

Features

ԦLower on-resistance

ԦUltra high-speed switching

Applications

ԦNotebook PCs

ԦCellular and portable phones

ԦOn-board power supplies

ԦLi-ion battery Systems

Package Dimensions

SOT-89

Millimeter

Min. Max.

3.00 REF.

1.50 REF.

REF.

Min.

4.4

Max.

4.6

4.05

1.50

1.30

2.40

0.89

4.25

1.70

1.50

2.60

1.20

0.40

1.40

0.35

0.52

1.60

0.41

5q TYP.

0.70 REF.

Absolute Maximum Ratings

Parameter

Symbol

Ratings

-30

Unit

Drain-Source Voltage

VDS

f12

-3.2

Gate-Source Voltage

Continuous Drain Current³

Pulsed Drain Current^1,2

D @Ta=25к

D @Ta=70к

-2.6

-10

Power Dissipation

PD@Ta=25к

Operating Junction and Storage Temperature Range

Linear Derating Factor

Tj, Tstg

-55 ~ +150

0.01

W/ć

Thermal Data

Parameter

Symbol

Rthj-amb

Ratings

Unit

ć/W

Thermal Resistance Junction-ambient³

Max.

GM162

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