Datasheet > GM161

GM161

更新时间： 2024-09-09 04:19:39

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	388K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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获取价格

数据手册

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GM161 数据手册

Pb Free Plating Product

ISSUED DATE :2004/11/03

GTM

CORPORATION

REVISED DATE :2005/07/21B

GM161

BVDSS

DS(ON)

20V

50mΩ

5.3A

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

Description

The GM161 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

efficient and cost-effectiveness device.

Features

ԦCapable of 2.5V gate drive!

ԦLower on-resistance

ԦReliable and Rugged

Applications

ԦNotebook PCs

ԦCellular and portable phones

ԦOn-board power supplies

ԦLi-ion battery Systems

Package Dimensions

SOT-89

Millimeter

Min. Max.

REF.

Min.

Max.

4.4

4.6

3.00 REF.

1.50 REF.

4.05

1.50

1.30

2.40

0.89

4.25

1.70

1.50

2.60

1.20

0.40

1.40

0.35

0.52

1.60

0.41

5q TYP.

0.70 REF.

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

VDSS

f12

5.3

Gate-Source Voltage

VGS

Continuous Drain Current³,VGS@4.5V

Pulsed Drain Current^1,2

D @Ta=25к

D @Ta=70к

4.3

Power Dissipation

PD@Ta=25к

Operating Junction and Storage Temperature Range

Linear Derating Factor

Tj, Tstg

-55 ~ +150

0.01

W/ć

Thermal Data

Parameter

Symbol

Rthj-amb

Ratings

Unit

ć/W

Thermal Resistance Junction-ambient³

Max.

GM161

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