Datasheet > GBAS70

GBAS70

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		肖特基二极管
页数	文件大小	规格书
2页	178K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

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数据手册

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GBAS70 数据手册

ISSUED DATE :2003/04/10

REVISED DATE :2005/12/28B

GTM

CORPORATION

GBAS70/A/C/S

S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E

V O LT AG E 7 0 V, C U R R E N T 7 0 m A

Description

These Schottky barrier diodes are designed for high speed switching applications, circuit protection and

voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is

excellent for hand held and portable applications where space is limited.

Package Dimensions

TPU.34)QBDLBHF*

Millimeter

REF.

Min.

2.70

2.40

1.40

0.35

Max.

3.10

2.80

1.60

0.50

0.10

0.55

Min.

Max.

1.90 REF.

1.00

1.30

0.20

1.15

10°

0.10

0.40

0.85

0°

0.45

Absolute Maximum Ratings at T

Parameter

A = 25к

Symbol

Ratings

+125

-65 ~ +125

Unit

Operating Junction Temperature

Storage Temperature

Tstg

Maximum Repetitive Peak Reverse Voltage

Maximum Average Forward Rectified Current

VRRM

к/W

Non- Repetitive Peak Forward Surge Current @ tp ≤ 1.0s

Thermal Resistance Junction to Ambient Air

Total Power Dissipation

IFSM

100

ꢀJA

445

225

Electrical Characteristics (at T

A = 25к unless otherwise noted)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Reverse Breakdown Voltage

(BR)R

=10ꢁA

410

750

1000

100

1=1mA

Forward Voltage

1=10mA

2=15mA

1=50V

Reverse Leakage Current

2=70V

Total Capacitance

2.0

=0V, f=1MHz

Reverse Recover Time

5.0

=10mA, R

=100ꢂ, Irr=1mA

GBAS70/A/C/S

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