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GBAS70 PDF预览

GBAS70

更新时间: 2024-10-28 03:39:07
品牌 Logo 应用领域
GTM 肖特基二极管
页数 文件大小 规格书
2页 178K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

GBAS70 数据手册

 浏览型号GBAS70的Datasheet PDF文件第2页 
ISSUED DATE :2003/04/10  
REVISED DATE :2005/12/28B  
GTM  
CORPORATION  
GBAS70/A/C/S  
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E  
V O LT AG E 7 0 V, C U R R E N T 7 0 m A  
Description  
These Schottky barrier diodes are designed for high speed switching applications, circuit protection and  
voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is  
excellent for hand held and portable applications where space is limited.  
Package Dimensions  
TPU.34)QBDLBHF*  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
2.70  
2.40  
1.40  
0.35  
0
Max.  
3.10  
2.80  
1.60  
0.50  
0.10  
0.55  
Min.  
Max.  
A
B
C
D
E
F
G
H
K
J
L
M
1.90 REF.  
1.00  
1.30  
0.20  
-
1.15  
10°  
0.10  
0.40  
0.85  
0°  
0.45  
Absolute Maximum Ratings at T  
Parameter  
A = 25к  
Symbol  
Tj  
Ratings  
+125  
-65 ~ +125  
70  
Unit  
к
Operating Junction Temperature  
Storage Temperature  
Tstg  
к
Maximum Repetitive Peak Reverse Voltage  
Maximum Average Forward Rectified Current  
VRRM  
V
Io  
70  
mA  
mA  
к/W  
mW  
Non- Repetitive Peak Forward Surge Current @ tp 1.0s  
Thermal Resistance Junction to Ambient Air  
Total Power Dissipation  
IFSM  
100  
R
JA  
445  
PD  
225  
Electrical Characteristics (at T  
A = 25к unless otherwise noted)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
Reverse Breakdown Voltage  
V
(BR)R  
70  
-
-
-
-
-
-
V
I
I
I
I
R
=10A  
410  
750  
1000  
100  
10  
F
F
F
1=1mA  
Forward Voltage  
VF  
mV  
-
1=10mA  
2=15mA  
-
-
nA  
uA  
pF  
ns  
V
V
V
R
R
R
1=50V  
Reverse Leakage Current  
IR  
-
2=70V  
Total Capacitance  
C
T
-
-
-
2.0  
=0V, f=1MHz  
Reverse Recover Time  
T
rr  
-
5.0  
IF  
=I  
R
=10mA, R  
L
=100, Irr=1mA  
GBAS70/A/C/S  
Page: 1/2  

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