Datasheet > GBAV70

GBAV70

更新时间： 2024-10-28 03:39:07

品牌	Logo	应用领域
GTM		二极管
页数	文件大小	规格书
3页	194K
描述
consists of two diodes in a plastic surface mount

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中文翻译

获取价格

数据手册

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GBAV70 数据手册

GTM CORPORATION

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GBAV70

Description

The GBAV70 consists of two diodes in a plastic surface mount package. The diodes are connected in series and the unit is

designed for high-speed switching application in hybrid thick and thin-film circuits.

Package Dimensions

SOT-23

TPU.34)QBDLBHF*

Style : Pin1.Anode 2. Anode 3. Cathode

Millimeter

Min. Max.

1.90 REF.

1.00 1.30

REF

REF.

Min.

Max.

3.10

2.80

1.60

0.50

0.10

0.55

2.70

2.40

1.40

0.35

0.10

0.40

0.85

0̓

0.20

1.15

10̓

0.45

Absolute Maximum Ratings at Ta = 25к

Parameter

Symbol

Ratings

+150

Unit

Junction Temperature

Storage Temperature

Reverse Voltage

Tstg

-65~+150

Forward Current

Repetitive Forward Current

Total Power Dissipation

200

500

225

Characteristics at Ta = 25к

Characteristic

Symbol

V(BR)

VF(1)

VF(2)

VF(3)

VF(4)

Min.

Max.

Unit

Test Conditions

Reverse Breakdown Voltage

IR=100uA

715

855

1100

1300

IF=1mA

IF=10mA

IF=50mA

IF=100mA

VR=80V

Forward Voltage

Reverse Current

Total Capacitance

1.5

VR=0, f=1MHz

IF=IR=10mA, RL=100Ө measured at

IR=1Ma,VR=5V

Reverse Recovery Time

Trr

GTM Product Specification

2004/02/06

12 3

中文翻译

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