Datasheet > GBAV99

GBAV99

更新时间： 2024-10-28 03:39:07

品牌	Logo	应用领域
GTM		二极管
页数	文件大小	规格书
2页	190K
描述
consists of two diodes in a plastic surface mount

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中文翻译

获取价格

数据手册

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GBAV99 数据手册

GTM CORPORATION

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GBAV99

Description

The GBAV99 consists of two diodes in a plastic surface mount package. The diodes are connected in series and the unit is

designed for high-speed switching application in hybrid thick and thin-film circuits.

Package Dimensions

SOT-23

TPU.34)QBDLBHF*

Style : Pin1.Anode 2.Cathode

3.Common Connection

Millimeter

Min. Max.

1.90 REF.

REF.

Min.

Max.

3.10

2.80

1.60

0.50

0.10

0.55

2.70

2.40

1.40

0.35

1.00

1.30

0.20

1.15

10̓

0.10

0.40

0.85

0̓

0.45

Absolute Maximum Ratings at Ta = 25к

Parameter

Symbol

Ratings

+150

Unit

Junction Temperature

Storage Temperature

Reverse Voltage

Tstg

-65~+150

Repetitive Reverse Voltage

Forward Current

Repetitive Forward Current

Forward Surge Current(1ms)

Total Power Dissipation

150

500

1000

250

Characteristics at Ta = 25к

Characteristic

Symbol

V(BR)

VF(1)

VF(2)

VF(3)

VF(4)

Min.

Max.

Unit

Test Conditions

Reverse Breakdown Voltage

IR=100uA

IF=1mA

715

855

1000

1250

2.5

IF=10mA

IF=50mA

IF=150mA

VR=70V

Forward Voltage

Reverse Current

Total Capacitance

Reverse Recovery Time

1.5

VR=0, f=1MHz

IF=IR=10mA, RL=100Ө measured at IR=1mA

Trr

GTM Product Specification

中文翻译

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