Datasheet > GBAT54A

GBAT54A

更新时间： 2024-10-28 03:39:07

品牌	Logo	应用领域
GTM		肖特基二极管
页数	文件大小	规格书
2页	224K
描述
Silicon Schottky Barrier Double Diodes .

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中文翻译

获取价格

数据手册

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GBAT54A 数据手册

GTM CORPORATION

Page : 1/2

GBAT54/A/C/S

Description

Silicon Schottky Barrier Double Diodes .

Package Dimensions

TPU.34)QBDLBHF*

Millimeter

Min.

1.90 REF.

REF.

Min.

2.70

2.40

1.40

0.35

Max.

3.10

2.80

1.60

0.50

0.10

0.55

Max.

1.00

1.30

0.20

0.10

0.40

0.85

0̓

1.15

10̓

0.45

Style : Pin 1.Anode 2.Cathode 3.Common Connection

Absolute Maximum Ratings

Parameter

Symbol

Ratings

+125

-65 ~ +125

Unit

Junction Temperature

Storage Temperature

Tstg

Repetitive Peak Reverse Voltage

Forward Continuous Current

Repetitive Peak Forward Current

Surge Forward Current

200

300

600

Total Power Dissipation at Ta = 25к

230

Characteristics at Ta = 25к

characteristics

Symbol

Min

Max.

Unit

Test Conditions

V(BR)R

Reverse breakdown voltage

IR=10uA

VF(1)

VF(2)

VF(3)

VF(4)

VF(5)

240

320

400

500

1000

2.0

IF=0.1mA

IF=1mA

Forward Voltage

IF=10mA

IF=30mA

IF=100mA

VR=25V

Reverse Current

Total Capacitance

VR=1V, f=1MHz

Trr

IF=IR=10mA, RL=100Ө measured at IR=1mA

Reverse Recover Time

GTM Product Specification

中文翻译

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