Datasheet > GBAT54S

GBAT54S

更新时间： 2024-10-28 03:39:07

品牌	Logo	应用领域
GTM		肖特基二极管
页数	文件大小	规格书
2页	224K
描述
Silicon Schottky Barrier Double Diodes .

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

GBAT54S 数据手册

GTM CORPORATION

Page : 1/2

GBAT54/A/C/S

Description

Silicon Schottky Barrier Double Diodes .

Package Dimensions

TPU.34)QBDLBHF*

Millimeter

Min.

1.90 REF.

REF.

Min.

2.70

2.40

1.40

0.35

Max.

3.10

2.80

1.60

0.50

0.10

0.55

Max.

1.00

1.30

0.20

0.10

0.40

0.85

0̓

1.15

10̓

0.45

Style : Pin 1.Anode 2.Cathode 3.Common Connection

Absolute Maximum Ratings

Parameter

Symbol

Ratings

+125

-65 ~ +125

Unit

Junction Temperature

Storage Temperature

Tstg

Repetitive Peak Reverse Voltage

Forward Continuous Current

Repetitive Peak Forward Current

Surge Forward Current

200

300

600

Total Power Dissipation at Ta = 25к

230

Characteristics at Ta = 25к

characteristics

Symbol

Min

Max.

Unit

Test Conditions

V(BR)R

Reverse breakdown voltage

IR=10uA

VF(1)

VF(2)

VF(3)

VF(4)

VF(5)

240

320

400

500

1000

2.0

IF=0.1mA

IF=1mA

Forward Voltage

IF=10mA

IF=30mA

IF=100mA

VR=25V

Reverse Current

Total Capacitance

VR=1V, f=1MHz

Trr

IF=IR=10mA, RL=100Ө measured at IR=1mA

Reverse Recover Time

GTM Product Specification

中文翻译

下载PDF

与GBAT54S相关器件

型号	品牌	获取价格	描述	数据表
GBAV151	GTM	获取价格	SURFACE MOUNT,SWITCHING DIODE
GBAV152	GTM	获取价格	SURFACE MOUNT,SWITCHING DIODE
GBAV70	GTM	获取价格	consists of two diodes in a plastic surface mount
GBAV99	GTM	获取价格	consists of two diodes in a plastic surface mount
GBAW56	GTM	获取价格	SURFACE MOUNT,SWITCHING DIODE
GBB.0S.250.LN	ETC	获取价格	CONN TAPERED WASHR FOR S SERIES
GBB.1S.250.LN	ETC	获取价格	CONN TAPERED WASHR FOR S SERIES
GBB.2S.250.LN	ETC	获取价格	CONN TAPERED WASHR FOR S SERIES
GBB.5S.250.LN	ETC	获取价格	CONN TAPERED WASHR FOR S SERIES
GBB05DHAD	ETC	获取价格	CONN EDGE DUAL FMALE 10POS 0.050