GAL16VP8
High-Speed E2CMOS PLD
Generic Array Logic™
Features
Functional Block Diagram
• HIGH DRIVE E2CMOS® GAL® DEVICE
— TTL Compatible 64 mA Output Drive
— 15 ns Maximum Propagation Delay
— Fmax = 80 MHz
I/CLK
I
CLK
— 10 ns Maximum from Clock Input to Data Output
I/O/Q
8
8
OLMC
— UltraMOS® Advanced CMOS Technology
I
• ENHANCED INPUT AND OUTPUT FEATURES
— Schmitt Trigger Inputs
— Programmable Open-Drain or Totem-Pole Outputs
— Active Pull-Ups on All Inputs and I/O pins
• E2 CELL TECHNOLOGY
— Reconfigurable Logic
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
OLMC
OLMC
OLMC
OLMC
OLMC
OLMC
OLMC
I
8
8
8
I
I
I
I
— Reprogrammable Cells
— 100% Tested/100% Yields
— High Speed Electrical Erasure (<100ms)
— 20 Year Data Retention
• EIGHT OUTPUT LOGIC MACROCELLS
— Maximum Flexibility for Complex Logic Designs
— Programmable Output Polarity
— Architecturally Compatible with Standard GAL16V8
• PRELOAD AND POWER-ON RESET OF ALL REGISTERS
— 100% Functional Testability
8
8
8
• APPLICATIONS INCLUDE:
— Ideal for Bus Control & Bus Arbitration Logic
— Bus Address Decode Logic
— Memory Address, Data and Control Circuits
— DMA Control
I
I
I/O/Q
I/OE
• ELECTRONIC SIGNATURE FOR IDENTIFICATION
OE
Description
The GAL16VP8, with 64 mA drive capability and 15 ns maximum
propagation delay time is ideal for Bus and Memory control appli-
Pin Configuration
cations.
The GAL16VP8 is manufactured using Lattice
DIP
Semiconductor's advanced E2CMOS process which combines
CMOS with Electrically Erasable (E2) floating gate technology. High
speed erase times (<100ms) allow the devices to be reprogrammed
quickly and efficiently.
PLCC
1
20
I/CLK
I
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I
I
I
I/CLK
I
I/O/Q
System bus and memory interfaces require control logic before
driving the bus or memory interface signals. The GAL16VP8
combines the familiar GAL16V8 architecture with bus drivers as
its outputs. The generic architecture provides maximum design flex-
ibility by allowing the Output Logic Macrocell (OLMC) to be con-
figured by the user. The 64mAoutput drive eliminates the need for
additional devices to provide bus driving capability.
I
I
GAL
2
20
18
4
6
I/O/Q
I
16VP8
I/O/Q
I/O/Q
Vcc
I
5
Vcc
GAL16VP8
Top View
16
15
GND
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I
GND
I/O/Q
I
I
I
I
Unique test circuitry and reprogrammable cells allow completeAC,
DC, and functional testing during manufacture. As a result, Lattice
Semiconductor delivers 100% field programmability and function-
ality of all GAL products. In addition, 100 erase/write cycles and
data retention in excess of 20 years are specified.
14
8
13
9
I
11
I/OE I/O/Q I/O/Q I/O/Q
I
10
11
I/OE
Copyright © 1997 Lattice Semiconductor Corp. All brand or product names are trademarks or registered trademarks of their respective holders. The specifications and information herein are subject
to change without notice.
LATTICE SEMICONDUCTOR CORP., 5555 Northeast Moore Ct., Hillsboro, Oregon 97124, U.S.A.
Tel. (503) 268-8000; 1-800-LATTICE; FAX (503) 268-8556; http://www.latticesemi.com
December 1997
16vp8_03
1