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GAL18V10-20LJ

更新时间: 2024-11-07 22:25:11
品牌 Logo 应用领域
莱迪思 - LATTICE /
页数 文件大小 规格书
16页 267K
描述
High Performance E2CMOS PLD Generic Array Logic

GAL18V10-20LJ 数据手册

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GAL18V10  
High Performance E2CMOS PLD  
Generic Array Logic™  
Features  
Functional Block Diagram  
HIGH PERFORMANCE E2CMOS® TECHNOLOGY  
7.5 ns Maximum Propagation Delay  
Fmax = 111 MHz  
RESET  
I/CLK  
5.5 ns Maximum from Clock Input to Data Output  
8
TTL Compatible 16 mA Outputs  
OLMC  
OLMC  
OLMC  
OLMC  
OLMC  
OLMC  
OLMC  
OLMC  
OLMC  
OLMC  
I/O/Q  
I/O/Q  
UltraMOS® Advanced CMOS Technology  
8
8
I
I
I
I
I
I
I
LOW POWER CMOS  
75 mA Typical Icc  
ACTIVE PULL-UPS ON ALL PINS  
E2 CELL TECHNOLOGY  
Reconfigurable Logic  
Reprogrammable Cells  
100% Tested/100% Yields  
High Speed Electrical Erasure (<100ms)  
20 Year Data Retention  
I/O/Q  
I/O/Q  
8
10  
10  
8
I/O/Q  
I/O/Q  
TEN OUTPUT LOGIC MACROCELLS  
Uses Standard 22V10 Macrocell Architecture  
Maximum Flexibility for Complex Logic Designs  
PRELOAD AND POWER-ON RESET OF REGISTERS  
100% Functional Testability  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
APPLICATIONS INCLUDE:  
DMA Control  
State Machine Control  
High Speed Graphics Processing  
Standard Logic Speed Upgrade  
8
8
ELECTRONIC SIGNATURE FOR IDENTIFICATION  
8
Description  
PRESET  
The GAL18V10, at 7.5 ns maximum propagation delay time, com-  
bines a high performance CMOS process with Electrically Eras-  
able (E2) floating gate technology to provide a very flexible 20-pin  
PLD. CMOS circuitry allows the GAL18V10 to consume much less  
power when compared to its bipolar counterparts. The E2 technol-  
ogy offers high speed (<100ms) erase times, providing the ability  
to reprogram or reconfigure the device quickly and efficiently.  
Pin Configuration  
DIP  
PLCC  
1
20  
Vcc  
I/CLK  
By building on the popular 22V10 architecture, the GAL18V10  
eliminates the learning curve usually associated with using a new  
device architecture. The generic architecture provides maximum  
design flexibility by allowing the Output Logic Macrocell (OLMC)  
to be configured by the user. The GAL18V10 OLMC is fully com-  
patible with the OLMC in standard bipolar and CMOS 22V10 de-  
vices.  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I
I
I
I
I
I/CLK Vcc I/O/Q  
20  
2
GAL  
18  
I/O/Q  
I/O/Q  
4
6
I
18V10  
I
I
5
I
I
GAL18V10  
Top View  
16 I/O/Q  
I/O/Q  
15  
I
I
Unique test circuitry and reprogrammable cells allow completeAC,  
DC, and functional testing during manufacture. As a result, Lattice  
Semiconductor delivers 100% field programmability and function-  
ality of all GAL products. In addition, 100 erase/write cycles and  
data retention in excess of 20 years are specified.  
I
I
I/O/Q  
14  
8
9
11  
13  
I/O/Q GND I/O/Q I/O/Q I/O/Q  
I/O/Q  
GND  
10  
11  
Copyright © 1997 Lattice Semiconductor Corp. All brand or product names are trademarks or registered trademarks of their respective holders. The specifications and information herein are subject  
to change without notice.  
LATTICE SEMICONDUCTOR CORP., 5555 Northeast Moore Ct., Hillsboro, Oregon 97124, U.S.A.  
Tel. (503) 681-0118; 1-888-ISP-PLDS; FAX (503) 681-3037; http://www.latticesemi.com  
July 1997  
1
18v10_03  

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