GAL18V10
High Performance E2CMOS PLD
Generic Array Logic™
Features
Functional Block Diagram
• HIGH PERFORMANCE E2CMOS® TECHNOLOGY
— 7.5 ns Maximum Propagation Delay
— Fmax = 111 MHz
RESET
I/CLK
— 5.5 ns Maximum from Clock Input to Data Output
8
— TTL Compatible 16 mA Outputs
OLMC
OLMC
OLMC
OLMC
OLMC
OLMC
OLMC
OLMC
OLMC
OLMC
I/O/Q
I/O/Q
— UltraMOS® Advanced CMOS Technology
8
8
I
I
I
I
I
I
I
• LOW POWER CMOS
— 75 mA Typical Icc
• ACTIVE PULL-UPS ON ALL PINS
• E2 CELL TECHNOLOGY
— Reconfigurable Logic
— Reprogrammable Cells
— 100% Tested/100% Yields
— High Speed Electrical Erasure (<100ms)
— 20 Year Data Retention
I/O/Q
I/O/Q
8
10
10
8
I/O/Q
I/O/Q
• TEN OUTPUT LOGIC MACROCELLS
— Uses Standard 22V10 Macrocell Architecture
— Maximum Flexibility for Complex Logic Designs
• PRELOAD AND POWER-ON RESET OF REGISTERS
— 100% Functional Testability
I/O/Q
I/O/Q
I/O/Q
I/O/Q
• APPLICATIONS INCLUDE:
— DMA Control
— State Machine Control
— High Speed Graphics Processing
— Standard Logic Speed Upgrade
8
8
• ELECTRONIC SIGNATURE FOR IDENTIFICATION
8
Description
PRESET
The GAL18V10, at 7.5 ns maximum propagation delay time, com-
bines a high performance CMOS process with Electrically Eras-
able (E2) floating gate technology to provide a very flexible 20-pin
PLD. CMOS circuitry allows the GAL18V10 to consume much less
power when compared to its bipolar counterparts. The E2 technol-
ogy offers high speed (<100ms) erase times, providing the ability
to reprogram or reconfigure the device quickly and efficiently.
Pin Configuration
DIP
PLCC
1
20
Vcc
I/CLK
By building on the popular 22V10 architecture, the GAL18V10
eliminates the learning curve usually associated with using a new
device architecture. The generic architecture provides maximum
design flexibility by allowing the Output Logic Macrocell (OLMC)
to be configured by the user. The GAL18V10 OLMC is fully com-
patible with the OLMC in standard bipolar and CMOS 22V10 de-
vices.
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I
I
I
I
I
I/CLK Vcc I/O/Q
20
2
GAL
18
I/O/Q
I/O/Q
4
6
I
18V10
I
I
5
I
I
GAL18V10
Top View
16 I/O/Q
I/O/Q
15
I
I
Unique test circuitry and reprogrammable cells allow completeAC,
DC, and functional testing during manufacture. As a result, Lattice
Semiconductor delivers 100% field programmability and function-
ality of all GAL products. In addition, 100 erase/write cycles and
data retention in excess of 20 years are specified.
I
I
I/O/Q
14
8
9
11
13
I/O/Q GND I/O/Q I/O/Q I/O/Q
I/O/Q
GND
10
11
Copyright © 1997 Lattice Semiconductor Corp. All brand or product names are trademarks or registered trademarks of their respective holders. The specifications and information herein are subject
to change without notice.
LATTICE SEMICONDUCTOR CORP., 5555 Northeast Moore Ct., Hillsboro, Oregon 97124, U.S.A.
Tel. (503) 681-0118; 1-888-ISP-PLDS; FAX (503) 681-3037; http://www.latticesemi.com
July 1997
1
18v10_03