Datasheet > FX6ASJ-06

FX6ASJ-06

更新时间： 2024-11-05 22:05:51

品牌	Logo	应用领域
三菱 - MITSUBISHI		晶体开关晶体管
页数	文件大小	规格书
4页	48K
描述
HIGH-SPEED SWITCHING USE

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中文翻译

获取价格

数据手册

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FX6ASJ-06 数据手册

MITSUBISHI Pch POWER MOSFET

FX6ASJ-06

HIGH-SPEED SWITCHING USE

FX6ASJ-06

OUTLINE DRAWING

Dimensions in mm

6.5

0.5 ± 0.1

5.0 ± 0.2

1.0

0.9 max

0.5 ± 0.2

2.3 2.3

0.8

GATE

DRAIN

SOURCE

DRAIN

4V DRIVE

•

VDSS ............................................................... –60V

rDS (ON) (MAX) ................................................ 0.21Ω

•

ID ...................................................................... –6A

Integrated Fast Recovery Diode (TYP.) ...........50ns

•

MP-3

APPLICATION

Motor control, Lamp control, Solenoid control

DC-DC converter, etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol

VDSS

VGSS

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Conditions

Ratings

–60

Unit

VGS = 0V

VDS = 0V

±20

–6

IDM

IDA

Drain current (Pulsed)

–24

Avalanche drain current (Pulsed) L = 100µH

Source current

–6

ISM

Source current (Pulsed)

Maximum power dissipation

Channel temperature

–24

°C

Tch

–55 ~ +150

0.26

Tstg

—

Storage temperature

Weight

Typical value

Jan.1999

12 3 4

中文翻译

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与FX6ASJ-06相关器件

型号	品牌	获取价格	描述	数据表
FX6ASJ-06-T13	RENESAS	获取价格	High-Speed Switching Use Pch Power MOS FET
FX6ASJ-06-T23	RENESAS	获取价格	6A, 60V, 0.37ohm, P-CHANNEL, Si, POWER, MOSFET, MP-3A, SC-63, 3 PIN
FX6ASJ2	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 6A I(D) \| TO-252AA
FX6ASJ-2	MITSUBISHI	获取价格	HIGH-SPEED SWITCHING USE
FX6ASJ-2	POWEREX	获取价格	Pch POWER MOSFET HIGH-SPEED SWITCHING USE
FX6ASJ-2	RENESAS	获取价格	High-Speed Switching Use Pch Power MOS FET
FX6ASJ-2-T13	RENESAS	获取价格	High-Speed Switching Use Pch Power MOS FET
FX6ASJ3	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 150V V(BR)DSS \| 6A I(D) \| TO-252AA
FX6ASJ-3	POWEREX	获取价格	Pch POWER MOSFET HIGH-SPEED SWITCHING USE
FX6ASJ-3	RENESAS	获取价格	High-Speed Switching Use Pch Power MOS FET