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FX6ASJ-2-T13 PDF预览

FX6ASJ-2-T13

更新时间: 2024-11-23 07:00:51
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体开关晶体管功率场效应晶体管脉冲
页数 文件大小 规格书
7页 173K
描述
High-Speed Switching Use Pch Power MOS FET

FX6ASJ-2-T13 技术参数

生命周期:Not Recommended零件包装代码:SC-63
包装说明:MP-3A, SC-63, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.19Is Samacsys:N
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):6 A
最大漏源导通电阻:0.72 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):24 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FX6ASJ-2-T13 数据手册

 浏览型号FX6ASJ-2-T13的Datasheet PDF文件第2页浏览型号FX6ASJ-2-T13的Datasheet PDF文件第3页浏览型号FX6ASJ-2-T13的Datasheet PDF文件第4页浏览型号FX6ASJ-2-T13的Datasheet PDF文件第5页浏览型号FX6ASJ-2-T13的Datasheet PDF文件第6页浏览型号FX6ASJ-2-T13的Datasheet PDF文件第7页 
FX6ASJ-2  
High-Speed Switching Use  
Pch Power MOS FET  
REJ03G1438-0200  
(Previous: MEJ02G0279-0101)  
Rev.2.00  
Aug 07, 2006  
Features  
Drive voltage : 4 V  
DSS : – 100 V  
DS(ON) (max) : 0.58 Ω  
V
r
ID : – 6 A  
Integrated Fast Recovery Diode (TYP.) : 80 ns  
Outline  
RENESAS Package code: PRSS0004ZA-A  
(Package name: MP-3A)  
4
1. Gate  
2. Drain  
3. Source  
4. Drain  
1
2
3
2, 4  
Applications  
Motor control, Lamp coDC converters, etc.  
Maximum Ratings  
(Tc = 25°C)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Ratings  
Unit  
Conditions  
VGS = 0 V  
–100  
V
V
±20  
VDS = 0 V  
–6  
A
Drain current (Pulsed)  
Avalanche drain current (Pulsed)  
Source current  
IDM  
–24  
A
IDA  
–6  
–6  
A
L = 100 µH  
IS  
A
Source current (Pulsed)  
Maximum power dissipation  
Channel temperature  
Storage temperature  
Mass  
ISM  
–24  
A
PD  
30  
W
°C  
°C  
g
Tch  
Tstg  
– 55 to +150  
– 55 to +150  
0.32  
Typical value  
Rev.2.00 Aug 07, 2006 page 1 of 6  

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