Datasheet > FX6ASJ-06-T13

FX6ASJ-06-T13

更新时间： 2024-09-16 07:00:51

品牌	Logo	应用领域
瑞萨 - RENESAS		开关
页数	文件大小	规格书
7页	173K
描述
High-Speed Switching Use Pch Power MOS FET

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数据手册

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FX6ASJ-06-T13 数据手册

FX6ASJ-06

High-Speed Switching Use

Pch Power MOS FET

REJ03G1437-0200

(Previous: MEJ02G0272-0101)

Rev.2.00

Aug 07, 2006

Features

•

Drive voltage : 4 V

_DSS: – 60 V

_{DS(ON) (max)}: 0.21 Ω

I_D: – 6 A

Integrated Fast Recovery Diode (TYP.) : 50 ns

Outline

RENESAS Package code: PRSS0004ZA-A

(Package name: MP-3A)

1. Gate

2. Drain

3. Source

4. Drain

2, 4

Applications

Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

Maximum Ratings

(Tc = 25°C)

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

Unit

Conditions

V_GS= 0 V

–60

±20

V_DS= 0 V

–6

Drain current (Pulsed)

Avalanche drain current (Pulsed)

Source current

I_DM

–24

I_DA

–6

L = 100 µH

I_S

Source current (Pulsed)

Maximum power dissipation

Channel temperature

Storage temperature

Mass

I_SM

–24

P_D

°C

Tch

Tstg

—

– 55 to +150

0.32

Typical value

Rev.2.00 Aug 07, 2006 page 1 of 6

12 3 4 5 6 7

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与FX6ASJ-06-T13相关器件

型号	品牌	获取价格	描述	数据表
FX6ASJ-06-T23	RENESAS	获取价格	6A, 60V, 0.37ohm, P-CHANNEL, Si, POWER, MOSFET, MP-3A, SC-63, 3 PIN
FX6ASJ2	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 6A I(D) \| TO-252AA
FX6ASJ-2	MITSUBISHI	获取价格	HIGH-SPEED SWITCHING USE
FX6ASJ-2	POWEREX	获取价格	Pch POWER MOSFET HIGH-SPEED SWITCHING USE
FX6ASJ-2	RENESAS	获取价格	High-Speed Switching Use Pch Power MOS FET
FX6ASJ-2-T13	RENESAS	获取价格	High-Speed Switching Use Pch Power MOS FET
FX6ASJ3	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 150V V(BR)DSS \| 6A I(D) \| TO-252AA
FX6ASJ-3	POWEREX	获取价格	Pch POWER MOSFET HIGH-SPEED SWITCHING USE
FX6ASJ-3	RENESAS	获取价格	High-Speed Switching Use Pch Power MOS FET
FX6ASJ-3	MITSUBISHI	获取价格	HIGH-SPEED SWITCHING USE