SEMICONDUCTOR
FTK2N60P / F / D / I
TECHNICAL DATA
2 Amps, 600 Volts
N-CHANNEL MOSFET
I :
1
TO - 251
DESCRIPTION
The FTK 2N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
D :
P :
F :
1
TO - 252
TO - 220
1
FEATURES
* RDS(ON) = 3.8Ω@VGS =10V
* Ultra Low gate charge (typical 1.5nC)
* Lowreverse transfer capacitance (CRSS = typical 5.0 pF)
* Fast sw itching capability
1
TO - 220F
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2Drain
1.Gate
3Source
ORDERING INFORMATION
Pin Assignment
Ordering Number
FTK2N60P
Package
Packing
1
G
2
D
3
TO-220
TO-220F
TO-251
TO-252
S
S
S
S
Tube
Tube
Tube
G
G
G
D
D
D
FTK2N60F
FTK2N60I
FTK2N60D
Tape Reel
Note: Pin Assignment:
G: Gate
D: Drain S: Source
2011. 08. 25
Revision No : A
1/7