SEMICONDUCTOR
FTK4N60P / F / D / I
TECHNICAL DATA
Power MOSFET
4 Amps, 600 Volt
I :
N-CHANNEL POWER MOSFET
1
TO - 251
D :
DESCRIPTION
1
TO - 252
The FTK 4N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
P :
1
TO - 220
F :
FEATURES
1
TO - 220F
* RDS(ON) = 2.5Ω@VGS = 10V
* Ultra low gate charge ( typical 10 nC )
* Low reverse transfer Capacitance ( CRSS = typical 7.5 pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Pin Assignment
Ordering Number
FTK4N60P
Package
Packing
1
G
2
D
3
S
TO-220
TO-220F
TO-251
TO-252
Tube
Tube
Tube
G
G
G
D
D
D
S
S
S
FTK4N60F
FTK4N60I
FTK4N60D
Tape Reel
Note: Pin Assignment:
G: Gate
D: Drain S: Source
2008. 07. 10
Revision No : 1
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