SEMICONDUCTOR
FTK2N65P / F / D / I
TECHNICAL DATA
2 Amps, 650 Volts
N-CHANNEL MOSFET
DESCRIPTION
These N-Channel enhancement mode power field effect
Transistors are produced using planar stripe, DMOS
technology.
This advanced technology has been especially tailored
to minimize on - state resistance , provide superior
switching performance,and Withstand high energy pulse
in the avalanche and commutaion mode .These devices
are well suited for high efficiency switch mode power
supply.
I :
1
TO - 251
TO - 252
D :
P :
F :
1
1
TO - 220
FEATURES
* RDS(ON) = 7.0Ω @V =10V I =1.2A
D
GS
* Ultra Low gate charge (typical 1.5nC)
* Lowreverse transfer capacitance (CRSS = typical 5.0 pF)
* Fast sw itching capability
1
TO - 220F
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2Drain
1.Gate
3Source
ORDERING INFORMATION
Pin Assignment
Ordering Number
FTK2N65P
Package
Packing
1
G
2
D
3
S
TO-220
TO-220F
TO-251
TO-252
Tube
Tube
Tube
G
G
G
D
D
D
S
S
S
FTK2N65F
FTK2N65I
FTK2N65D
Tape Reel
Note: Pin Assignment:
G: Gate
D: Drain S: Source
2011. 08. 25
Revision No : 0
1/7