Datasheet > FTK2N65D

FTK2N65D

更新时间： 2024-10-29 02:51:39

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
7页	346K
描述
2 Amps, 650 Volts N-CHANNEL MOSFET

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数据手册

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FTK2N65D 数据手册

SEMICONDUCTOR

FTK2N65P / F / D / I

TECHNICAL DATA

2 Amps, 650 Volts

N-CHANNEL MOSFET

DESCRIPTION

These N-Channel enhancement mode power field effect

Transistors are produced using planar stripe, DMOS

technology.

This advanced technology has been especially tailored

to minimize on - state resistance , provide superior

switching performance,and Withstand high energy pulse

in the avalanche and commutaion mode .These devices

are well suited for high efficiency switch mode power

supply.

I :

TO - 251

TO - 252

D :

P :

F :

TO - 220

FEATURES

* R_DS(ON)= 7.0Ω @V =10V I =1.2A

* Ultra Low gate charge (typical 1.5nC)

* Lowreverse transfer capacitance (C_RSS= typical 5.0 pF)

* Fast sw itching capability

TO - 220F

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

SYMBOL

2Drain

1.Gate

3Source

ORDERING INFORMATION

Pin Assignment

Ordering Number

FTK2N65P

Package

Packing

TO-220

TO-220F

TO-251

TO-252

Tube

FTK2N65F

FTK2N65I

FTK2N65D

Tape Reel

Note: Pin Assignment:

G: Gate

D: Drain S: Source

2011. 08. 25

Revision No : 0

1/7

12 3 4 5 6 7

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