Datasheet > FTK1N60D

FTK1N60D

更新时间： 2022-06-24 15:39:51

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
7页	321K
描述
1.0 Amps, 600 Volts N-CHANNEL MOSFET

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FTK1N60D 数据手册

SEMICONDUCTOR

FTK1N60P / F / D / I / S

TECHNICAL DATA

Power MOSFET

1.0 Amps, 600 Volts

N-CHANNEL MOSFET

I :

TO - 251

DESCRIPTION

The FTK 1N60 is a high voltage MOSFET and is designed to

have better characteristics, such as fast switching time, low gate

charge, low on-state resistance and have a high rugged avalanche

characteristics. This power MOSFET is usually used at high speed

switching applications in power supplies, PWM motor controls, high

efficient DC to DC converters and bridge circuits.

D :

TO - 252

P :

TO - 220

FEATURES

* R_DS(ON)= 9.6Ω@V_GS=10V

* Ultra Low gate charge (typical 5.0nC)

* Lowreverse transfer capacitance (C_RSS= typical 3.5 pF)

* Fast switching capability

F :

TO - 220F

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

S :

SOT-223

SYMBOL

2Drain

1.Gate

3Source

ORDERING INFORMATION

Pin Assignment

Ordering Number

Package

Packing

FTK1N60P

FTK1N60F

FTK1N60I

TO-220

TO-220F

TO-251

Tube

Tape Reel

FTK1N60D

FTK1N60S

TO-252

SOT-223

Note: Pin Assignment:

G: Gate

D: Drain S: Source

2017. 1. 28

Revision No : 0

1/7

12 3 4 5 6 7

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