Datasheet > FTK20NS65PD

FTK20NS65PD

更新时间： 2024-01-10 19:06:39

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
7页	889K
描述
20Amps, 650Volts N-Channel Super Juction MOS-FET

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数据手册

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FTK20NS65PD 数据手册

SEMICONDUCTOR

FTK20NS65P/F/DD

TECHNICAL DATA

20Amps, 650Volts N-Channel Super Juction MOS-FET

Product Summary

VDS @ Tj,max

R^DS(on),max

I^DM

650V

0.15Ω

60A

P :

Q^g,typ

39nC

TO-220

DESCRIPTION

F :

FTK20NS65 Power MOS FET is fabricated using

advanced super junction technology. The resulting

device has extremely low on resistance, making it

especially suitable for applications which require

superior power density and outstanding efficiency.

TO-220F

DD :

FEATURES

TO-263

�

Ultra fast body diode

Ultra low RDS(on)

Ultra low gate charge (typ. Qg = 39nC)

100% UIS tested

RoHS compliant

Applications

SYMBOL

�

Power faction correction (PFC).

2.Drain

�

Switched mode power supplies (SMPS).

Uninterruptible power supply (UPS).

1.Gate

3.Source

ORDERING INFORMATION

Pin Assignment

Order Number

Package

Packing

FTK20NS65P

FTK20NS65F

FTK20NS65DD

TO-220

TO-220F

TO-263

Tube

Reel & Taping

Note: Pin Assignmen:

G: Gate

D: Drain

S: Source

2017. 07. 05

Revision No : 1

1/7

12 3 4 5 6 7

中文翻译

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