5秒后页面跳转
FSTYC9055D1 PDF预览

FSTYC9055D1

更新时间: 2024-11-12 22:09:59
品牌 Logo 应用领域
英特矽尔 - INTERSIL /
页数 文件大小 规格书
8页 77K
描述
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

FSTYC9055D1 数据手册

 浏览型号FSTYC9055D1的Datasheet PDF文件第2页浏览型号FSTYC9055D1的Datasheet PDF文件第3页浏览型号FSTYC9055D1的Datasheet PDF文件第4页浏览型号FSTYC9055D1的Datasheet PDF文件第5页浏览型号FSTYC9055D1的Datasheet PDF文件第6页浏览型号FSTYC9055D1的Datasheet PDF文件第7页 
FSTYC9055D, FSTYC9055R  
TM  
Data Sheet  
June 2000  
File Number 4755.1  
Radiation Hardened, SEGR Resistant  
P-Channel Power MOSFETs  
Features  
• 64A, -60V, r  
= 0.023Ω  
DS(ON)  
The Discrete Products Operation of Intersil has developed a  
series of Radiation Hardened MOSFETs specifically  
designed for commercial and military space applications.  
Immunity to Single Event Effects (SEE) is combined with  
100K RADs of total dose hardness to provide devices which  
are ideally suited to harsh space environments. The dose  
rate and neutron tolerance necessary for military  
Total Dose  
- Meets Pre-RAD Specifications to 100K RAD (Si)  
Typical SEE Immunity  
2
- LET of 36MeV/mg/cm with V  
up to 80% of Rated  
up to 100% of Rated  
DS  
Breakdown and V  
of 0V  
2
GS  
- LET of 26MeV/mg/cm with V  
DS  
Breakdown and V  
of 5V Off-Bias  
applications have not been sacrificed.  
GS  
• Dose Rate  
- Typically Survives 3E9 RAD (Si)/s at 80% BV  
The Intersil portfolio of SEGR resistant radiation hardened  
MOSFETs includes N-Channel and P-Channel devices in a  
variety of voltage, current and on-resistance ratings.  
Numerous packaging options are also available.  
DSS  
- Typically Survives 2E12 if Current Limited to I  
DM  
• Photo Current  
This MOSFET is an enhancement-mode silicon-gate power  
field-effect transistor of the vertical DMOS (VDMOS)  
structure. It is specially designed and processed to be  
radiation tolerant. The MOSFET is well suited for  
applications exposed to radiation environments such as  
switching regulation, switching converters, motor drives,  
relay drivers and drivers for high-power bipolar switching  
transistors requiring high speed and low gate drive power.  
This type can be operated directly from integrated circuits.  
- 6nA Per-RAD (Si)/s Typically  
• Neutron  
- Maintain Pre-RAD Specifications  
2
for 3E13 Neutrons/cm  
2
- Usable to 3E14 Neutrons/cm  
Symbol  
D
Reliability screening is available as either commercial, TXV  
equivalent of MIL-S-19500, or Space equivalent of  
MIL-S-19500. Contact Intersil for any desired deviations  
from the data sheet.  
G
S
Formerly available as type TA17750T.  
Ordering Information  
Packaging  
SMD2  
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND  
10K  
Commercial  
TXV  
FSTYC9055D1  
FSTYC9055D3  
FSTYC9055R1  
FSTYC9055R3  
FSTYC9055R4  
10K  
100K  
100K  
100K  
Commercial  
TXV  
Space  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000  
1

与FSTYC9055D1相关器件

型号 品牌 获取价格 描述 数据表
FSTYC9055D3 INTERSIL

获取价格

Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSTYC9055R INTERSIL

获取价格

Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSTYC9055R1 INTERSIL

获取价格

Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSTYC9055R1 RENESAS

获取价格

64A, 60V, 0.023ohm, P-CHANNEL, Si, POWER, MOSFET, CERAMIC, LCC-3
FSTYC9055R3 RENESAS

获取价格

64A, 60V, 0.023ohm, P-CHANNEL, Si, POWER, MOSFET, CERAMIC, LCC-3
FSTYC9055R3 INTERSIL

获取价格

Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSTYC9055R4 INTERSIL

获取价格

Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSTYC9055R4 RENESAS

获取价格

暂无描述
FSU 5x20 SCHURTER

获取价格

Miniature Fuse
FSU01LG EUDYNA

获取价格

General Purpose GaAs FET