Datasheet > FSTYC9055R1

FSTYC9055R1

更新时间： 2024-11-13 20:22:43

品牌	Logo	应用领域
瑞萨 - RENESAS		开关脉冲晶体管
页数	文件大小	规格书
8页	73K
描述
64A, 60V, 0.023ohm, P-CHANNEL, Si, POWER, MOSFET, CERAMIC, LCC-3

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技术参数
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FSTYC9055R1 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
零件包装代码：	DLCC	包装说明：	CHIP CARRIER, R-CBCC-N3
针数：	3	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	风险等级：	5.3
Is Samacsys：	N	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	60 V
最大漏极电流 (Abs) (ID)：	64 A	最大漏极电流 (ID)：	64 A
最大漏源导通电阻：	0.023 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-CBCC-N3	JESD-609代码：	e0
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	RECTANGULAR
封装形式：	CHIP CARRIER	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	162 W	最大脉冲漏极电流 (IDM)：	192 A
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	NO LEAD	端子位置：	BOTTOM
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

FSTYC9055R1 数据手册

FSTYC9055D, FSTYC9055R

Data Sheet

June 2000

File Number 4755.1

Radiation Hardened, SEGR Resistant

P-Channel Power MOSFETs

Features

• 64A, -60V, r

= 0.023Ω

DS(ON)

The Discrete Products Operation of Intersil has developed a

series of Radiation Hardened MOSFETs speciﬁcally

designed for commercial and military space applications.

Immunity to Single Event Effects (SEE) is combined with

100K RADs of total dose hardness to provide devices which

are ideally suited to harsh space environments. The dose

rate and neutron tolerance necessary for military

• Total Dose

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

• Typical SEE Immunity

- LET of 36MeV/mg/cm with V

up to 80% of Rated

up to 100% of Rated

Breakdown and V

of 0V

- LET of 26MeV/mg/cm with V

Breakdown and V

of 5V Off-Bias

applications have not been sacriﬁced.

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

DSS

- Typically Survives 2E12 if Current Limited to I

• Photo Current

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS)

structure. It is specially designed and processed to be

radiation tolerant. The MOSFET is well suited for

applications exposed to radiation environments such as

switching regulation, switching converters, motor drives,

relay drivers and drivers for high-power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

- 6nA Per-RAD (Si)/s Typically

• Neutron

- Maintain Pre-RAD Speciﬁcations

for 3E13 Neutrons/cm

- Usable to 3E14 Neutrons/cm

Symbol

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Formerly available as type TA17750T.

Ordering Information

Packaging

SMD2

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K

Commercial

TXV

FSTYC9055D1

FSTYC9055D3

FSTYC9055R1

FSTYC9055R3

FSTYC9055R4

10K

100K

Commercial

TXV

Space

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7 8

中文翻译

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与FSTYC9055R1相关器件

型号	品牌	获取价格	描述	数据表
FSTYC9055R3	RENESAS	获取价格	64A, 60V, 0.023ohm, P-CHANNEL, Si, POWER, MOSFET, CERAMIC, LCC-3
FSTYC9055R3	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSTYC9055R4	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSTYC9055R4	RENESAS	获取价格	暂无描述
FSU 5x20	SCHURTER	获取价格	Miniature Fuse
FSU01LG	EUDYNA	获取价格	General Purpose GaAs FET
FSU02LG	EUDYNA	获取价格	General Purpose GaAs FET
FSU05A20	NIEC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 200V V(RRM), Silicon,
FSU05A20	KYOCERA AVX	获取价格	Fast recovery diodes are PN junction diodes with the same structure and function as genera
FSU05A30	NIEC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 300V V(RRM), Silicon,

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