Datasheet > FSU10B60

FSU10B60

更新时间： 2024-11-12 22:07:03

品牌	Logo	应用领域
NIEC		二极管瞄准线局域网
页数	文件大小	规格书
5页	45K
描述
FOR POWER FACTOR IMPROVEMENT HIGH FREQUENCY RECTIFICATION

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中文翻译

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数据手册

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FSU10B60 数据手册

FRD Type : FSU10B60

For Power Factor Improvement High Frequency Rectification

FEATURES

OUTLINE DRAWING

* Fully Molded Isolation Case

* Ultra – Fast Recovery

* Low Forward Voltage Drop

* Low Power Loss, High Efficiency

* High Surge Capability

Maximum Ratings

Approx Net Weight:1.7g

FSU10B60

Symbol

V_RRM

Rating

Unit

Repetitive Peak Reverse Voltage

600

50 Hz Half Sine Wave

Resistive Load

15.7

Average Rectified Output Current

RMS Forward Current

I_O

Tc=60°C

I_F(RMS)

I_FSM

50 Hz Half Sine Wave,1cycle

Non-repetitive

Surge Forward Current

100

Operating JunctionTemperature Range

Storage Temperature Range

Mounting torque

Tjw

Tstg

- 40 to + 150

0.5 Recommended value

°C

N•m

Electrical • Thermal Characteristics

Symbol

Conditions

Min. Typ. Max. Unit

Characteristics

Peak Reverse Current

Peak Forward Voltage

I_RM

V_FM

Tj= 25°C, V_RM= V_RRM

Tj= 25°C, I_FM= 10A

I_FM= 10A,

2.7

µA

2.3

Reverse Recovery Time

trr

-di/dt= 50 A/µs, Ta= 25°C

Rth(j-c) Junction to Case

Rth(c-f) Case to Fin

1.5

Thermal Resistance

°C/W

12 3 4 5

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