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FSU02LG

更新时间： 2024-09-25 03:30:43
品牌 Logo 应用领域
EUDYNA /
页数 文件大小 规格书
4页 105K
描述
General Purpose GaAs FET

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中文翻译

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FSU02LG 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred包装说明：DISK BUTTON, O-CRDB-F4
针数：4Reach Compliance Code：unknown
风险等级：5.73Is Samacsys：N
其他特性：LOW NOISE, HIGH RELIABILITY外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：12 V
FET 技术：JUNCTION最高频带：S BAND
JESD-30 代码：O-CRDB-F4元件数量：1
端子数量：4工作模式：DEPLETION MODE
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：ROUND
封装形式：DISK BUTTON峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子形式：FLAT
端子位置：RADIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：AMPLIFIER晶体管元件材料：GALLIUM ARSENIDE
Base Number Matches：1

FSU02LG 数据手册

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FSU02LG  
General Purpose GaAs FET  
FEATURES  
• High Output Power: P  
= 23.0dBm (Typ.)@2GHz  
= 17.0dB (Typ.)@2GHz  
1dB  
• High Associated Gain: G  
1dB  
• Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz  
• Low Bias Conditions: V =3V, 20mA  
DS  
• Cost Effective Hermetic Microstrip Package  
• Tape and Reel Available  
DESCRIPTION  
The FSU02LG is a high performance, low noise, GaAs FET designed for  
PCS/PCN applications as a driver in the 2GHz band.  
Fujitsu’s stringent Quality Assurance Program assures the highest  
reliability and consistent performance.  
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)  
Item  
Symbol  
Condition  
Unit  
Rating  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
12  
-5  
V
V
DS  
GS  
Note  
Total Power Dissipation  
Storage Temperature  
P
T
750  
-65 to +175  
175  
mW  
°C  
tot  
stg  
T
Channel Temperature  
°C  
ch  
Note: Mounted on Al O board (30 x 30 x 0.65mm)  
2
3
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:  
1. The drain-source operating voltage (V ) should not exceed 6 volts.  
DS  
2. The forward and reverse gate currents should not exceed 1.4 and -0.2 mA respectively with  
gate resistance of 2000Ω.  
3. The operating channel temperature (T ) should not exceed 145°C.  
ch  
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)  
Limit  
Item  
Symbol  
Test Conditions  
Unit  
Min.  
Max.  
Typ.  
110  
100  
V
V
= 3V, V  
= 0V  
GS  
Saturated Drain Current  
Transconductance  
I
80  
-
150  
-
mA  
mS  
V
DS  
DS  
DSS  
m
g
= 3V, I  
=54mA  
DS  
Pinch-off Voltage  
V
V
I
= 3V, I  
DS  
= 5.4mA  
-0.7  
-1.2 -1.7  
p
DS  
Gate Source Breakdown Voltage  
V
GSO  
= -5.4µA  
-5  
-
-
-
V
GS  
Output Power at 1dB  
Gain Compression Point  
P
V
I
= 6V  
22.0 23.0  
16.0 17.0  
1dB  
dBm  
DS  
= 80mA  
DS(DC)  
f = 2GHz  
Power Gain at 1dB  
Gain Compression Point  
G
-
1dB  
dB  
dB  
V
I
= 3V  
-
-
Noise Figure  
NF  
-
-
-
1.5  
17.5  
150  
DS  
= 20mA  
DS  
f = 2GHz  
Gas  
Associated Gain  
dB  
R
th  
Thermal Resistance  
Channel to Case  
200  
°C/W  
AVAILABLE CASE STYLES: LG  
G.C.P.: Gain Compression Point  
Note: The RF parameters are measured on a lot basis by sample testing  
at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested.  
Edition 1.2  
July 1999  
1
1234

中文翻译

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