是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 包装说明: | DISK BUTTON, X-CXDB-F4 |
针数: | 4 | Reach Compliance Code: | unknown |
风险等级: | 5.34 | Is Samacsys: | N |
其他特性: | HIGH RELIABILITY, LOW NOISE | 外壳连接: | SOURCE |
配置: | SINGLE | 最小漏源击穿电压: | 12 V |
FET 技术: | JUNCTION | 最高频带: | L BAND |
JESD-30 代码: | X-CXDB-F4 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | DEPLETION MODE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | UNSPECIFIED |
封装形式: | DISK BUTTON | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | UNSPECIFIED | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | GALLIUM ARSENIDE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FSU02LG | EUDYNA |
获取价格 |
General Purpose GaAs FET | |
FSU05A20 | NIEC |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 5A, 200V V(RRM), Silicon, | |
FSU05A20 | KYOCERA AVX |
获取价格 |
Fast recovery diodes are PN junction diodes with the same structure and function as genera | |
FSU05A30 | NIEC |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 5A, 300V V(RRM), Silicon, | |
FSU05A30 | KYOCERA AVX |
获取价格 |
Fast recovery diodes are PN junction diodes with the same structure and function as genera | |
FSU05A40 | NIEC |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 5A, 400V V(RRM), Silicon, | |
FSU05A40 | KYOCERA AVX |
获取价格 |
Fast recovery diodes are PN junction diodes with the same structure and function as genera | |
FSU05A60 | NIEC |
获取价格 |
FRD - Low Forward Voltage Drop | |
FSU05B60 | NIEC |
获取价格 |
FOR POWER FACTOR IMPROVEMENT HIGH FREQUENCY RECTIFICATION | |
FSU05D60 | KYOCERA AVX |
获取价格 |
Fast recovery diodes are PN junction diodes with the same structure and function as genera |