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FSU01LG

更新时间： 2024-11-13 03:30:43
品牌 Logo 应用领域
EUDYNA 晶体晶体管放大器
页数 文件大小 规格书
5页 108K
描述
General Purpose GaAs FET

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中文翻译

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FSU01LG 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred包装说明：DISK BUTTON, X-CXDB-F4
针数：4Reach Compliance Code：unknown
风险等级：5.34Is Samacsys：N
其他特性：HIGH RELIABILITY, LOW NOISE外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：12 V
FET 技术：JUNCTION最高频带：L BAND
JESD-30 代码：X-CXDB-F4元件数量：1
端子数量：4工作模式：DEPLETION MODE
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：UNSPECIFIED
封装形式：DISK BUTTON峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子形式：FLAT
端子位置：UNSPECIFIED处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：AMPLIFIER晶体管元件材料：GALLIUM ARSENIDE
Base Number Matches：1

FSU01LG 数据手册

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FSU01LG  
General Purpose GaAs FET  
FEATURES  
• High Output Power: P  
= 20.0dBm (Typ.)  
= 19.0dB (Typ.)  
1dB  
• High Associated Gain: G  
1dB  
• Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz  
• Low Bias Conditions: V =3V, 10mA  
DS  
• Cost Effective Hermetic Microstrip Package  
• Tape and Reel Available  
DESCRIPTION  
The FSU01LG is a high performance, low noise, GaAs FET designed for  
PCS/PCN applications as a driver in the 2GHz band.  
Fujitsu’s stringent Quality Assurance Program assures the highest  
reliability and consistent performance.  
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)  
Item  
Symbol  
Condition  
Unit  
Rating  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
12.0  
-5  
V
V
DS  
GS  
Note  
Total Power Dissipation  
Storage Temperature  
P
T
375  
-65 to +175  
175  
mW  
°C  
tot  
stg  
T
Channel Temperature  
°C  
ch  
Note: Mounted on Al O board (30 x 30 x 0.65mm)  
2
3
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:  
1. The drain-source operating voltage (V ) should not exceed 6 volts.  
DS  
2. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with  
gate resistance of 2000Ω.  
3. The operating channel temperature (T ) should not exceed 145°C.  
ch  
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)  
Limit  
Typ.  
Item  
Symbol  
Test Conditions  
Unit  
Min.  
Max.  
V
V
= 3V, V  
= 0V  
GS  
Saturated Drain Current  
Transconductance  
I
35  
-
55  
75  
-
mA  
mS  
V
DS  
DS  
DSS  
m
g
= 3V, I  
= 27mA  
50  
DS  
Pinch-off Voltage  
V
V
I
= 3V, I  
DS  
= 2.7mA  
-0.7  
-1.2 -1.7  
p
DS  
Gate Source Breakdown Voltage  
V
GSO  
= -2.7µA  
-5  
-
-
-
V
GS  
Output Power at 1dB  
Gain Compression Point  
P
V
= 6V  
= 40mA  
19.0 20.0  
18.0 19.0  
1dB  
dBm  
DS  
I
DS  
f = 2GHz  
Power Gain at 1dB  
Gain Compression Point  
G
-
1dB  
dB  
dB  
V
= 3V  
DS  
= 10mA  
-
-
Noise Figure  
NF  
-
-
-
0.55  
18.5  
300  
I
DS  
f = 2GHz  
Gas  
Associated Gain  
dB  
R
th  
Thermal Resistance  
Channel to Case  
400  
°C/W  
AVAILABLE CASE STYLES: LG  
G.C.P.: Gain Compression Point  
Note: The RF parameters are measured on a lot basis by sample testing  
at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested.  
Edition 1.2  
July 1999  
1
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中文翻译

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