Datasheet > FSTYC9055R

FSTYC9055R

更新时间： 2024-09-24 22:09:59

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
8页	77K
描述
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

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FSTYC9055R 数据手册

FSTYC9055D, FSTYC9055R

Data Sheet

June 2000

File Number 4755.1

Radiation Hardened, SEGR Resistant

P-Channel Power MOSFETs

Features

• 64A, -60V, r

= 0.023Ω

DS(ON)

The Discrete Products Operation of Intersil has developed a

series of Radiation Hardened MOSFETs speciﬁcally

designed for commercial and military space applications.

Immunity to Single Event Effects (SEE) is combined with

100K RADs of total dose hardness to provide devices which

are ideally suited to harsh space environments. The dose

rate and neutron tolerance necessary for military

• Total Dose

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

• Typical SEE Immunity

- LET of 36MeV/mg/cm with V

up to 80% of Rated

up to 100% of Rated

Breakdown and V

of 0V

- LET of 26MeV/mg/cm with V

Breakdown and V

of 5V Off-Bias

applications have not been sacriﬁced.

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

DSS

- Typically Survives 2E12 if Current Limited to I

• Photo Current

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS)

structure. It is specially designed and processed to be

radiation tolerant. The MOSFET is well suited for

applications exposed to radiation environments such as

switching regulation, switching converters, motor drives,

relay drivers and drivers for high-power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

- 6nA Per-RAD (Si)/s Typically

• Neutron

- Maintain Pre-RAD Speciﬁcations

for 3E13 Neutrons/cm

- Usable to 3E14 Neutrons/cm

Symbol

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Formerly available as type TA17750T.

Ordering Information

Packaging

SMD2

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K

Commercial

TXV

FSTYC9055D1

FSTYC9055D3

FSTYC9055R1

FSTYC9055R3

FSTYC9055R4

10K

100K

Commercial

TXV

Space

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7 8

中文翻译

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与FSTYC9055R相关器件

型号	品牌	获取价格	描述	数据表
FSTYC9055R1	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSTYC9055R1	RENESAS	获取价格	64A, 60V, 0.023ohm, P-CHANNEL, Si, POWER, MOSFET, CERAMIC, LCC-3
FSTYC9055R3	RENESAS	获取价格	64A, 60V, 0.023ohm, P-CHANNEL, Si, POWER, MOSFET, CERAMIC, LCC-3
FSTYC9055R3	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSTYC9055R4	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSTYC9055R4	RENESAS	获取价格	暂无描述
FSU 5x20	SCHURTER	获取价格	Miniature Fuse
FSU01LG	EUDYNA	获取价格	General Purpose GaAs FET
FSU02LG	EUDYNA	获取价格	General Purpose GaAs FET
FSU05A20	NIEC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 200V V(RRM), Silicon,

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