Datasheet > FSS210

FSS210

更新时间： 2024-11-22 23:52:59

品牌	Logo	应用领域
其他 - ETC		晶体二极管晶体管光电二极管瞄准线功效
页数	文件大小	规格书
4页	44K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 40V V(BR)DSS \| 9A I(D) \| SO

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FSS210 数据手册

Ordering number:ENN6448

N-Channel Silicon MOSFET

FSS210

DC/DC Converter Applications

Features

Package Dimensions

unit:mm

· Low ON resistance.

· 4V drive.

2116

[FSS210]

1 : Source

2 : Source

3 : Source

4 : Gate

0.2

5.0

5 : Drain

6 : Drain

7 : Drain

8 : Drain

1.27

0.595

0.43

Specifications

SANYO : SOP8

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Drain-to-Source Voltage

Symbol

Conditions

Ratings

Unit

±24

DSS

Gate-to-Source Voltage

Drain Current (DC)

GSS

Drain Current (pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

PW≤10µs, duty cycle≤1%

Mounted on a ceramic board (1000mm²×0.8mm)

Tch

2.0

150

˚C

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

=1mA, V =0

D GS

µA

(BR)DSS

=40V, V =0

DSS

=±16V, V =0

=10V, I =1mA

=10V, I =9A

±10

2.4

GSS

(off)

1.0

| yfs |

Forward Transfer Admittance

(on)1

=9A, V =10V

mΩ

Static Drain-to-Source On-State Resistance

(on)2

=4A, V =4V

Input Capacitance

Ciss

=10V, f=1MHz

1200

700

280

Output Capacitance

Reverse Transfer Capacitance

Marking : S210

Coss

Crss

=10V, f=1MHz

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

31000TS (KOTO) TA-2188 No.6448-1/4

12 3 4

中文翻译

下载PDF

与FSS210相关器件

型号	品牌	获取价格	描述	数据表
FSS212	SANYO	获取价格	DC/DC Converter Applications
FSS214	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 9A I(D) \| SO
FSS216	SANYO	获取价格	DC/DC Converter Applications
FSS218	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device
FSS22	ETC	获取价格	Schottky Rectifiers
FSS23	ETC	获取价格	Schottky Rectifiers
FSS230D	INTERSIL	获取价格	8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS230D1	INTERSIL	获取价格	8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS230D3	INTERSIL	获取价格	8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS230D4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 8A I(D) \| TO-257AA

与FSS210相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

36
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

28
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

56
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

53

产品中心

服务支持

精选活动

关于我们

帮助中心

FSS210

FSS210 数据手册

与FSS210相关器件

与FSS210相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FSS210

FSS210 数据手册

与FSS210相关器件

与FSS210相关文章

您还可以找

您在本页遇到什么问题？