Datasheet > FSS234D

FSS234D

更新时间： 2024-11-25 22:48:55

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
8页	48K
描述
6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

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FSS234D 数据手册

FSS234D, FSS234R

6A, 250V, 0.600 Ohm, Rad Hard,

SEGR Resistant, N-Channel Power MOSFETs

June 1998

Features

Description

• 6A, 250V, r

• Total Dose

= 0.600Ω

The Discrete Products Operation of Intersil Corporation has

developed a series of Radiation Hardened MOSFETs speciﬁ-

cally designed for commercial and military space applications.

DS(ON)

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

Enhanced Power MOSFET immunity to Single Event Effects

(SEE), Single Event Gate Rupture (SEGR) in particular, is

combined with 100K RADS of total dose hardness to provide

devices which are ideally suited to harsh space environments.

The dose rate and neutron tolerance necessary for military

applications have not been sacriﬁced.

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm with

up to 80% of Rated Breakdown and

of 10V Off-Bias

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

DSS

- Typically Survives 2E12 if Current Limited to I

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS) struc-

ture. It is specially designed and processed to be radiation

tolerant. The MOSFET is well suited for applications exposed

to radiation environments such as switching regulation,

switching converters, motor drives, relay drivers and drivers

for high-power bipolar switching transistors requiring high

speed and low gate drive power. This type can be operated

directly from integrated circuits.

• Photo Current

- 4.0nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Speciﬁcations

for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K

Commercial

TXV

FSS234D1

FSS234D3

FSS234R1

FSS234R3

FSS234R4

10K

Symbol

100K

Commercial

TXV

Space

Formerly available as type TA17638.

Package

TO-257AA

CAUTION: Beryllia Warning per MIL-S-19500

refer to package speciﬁcations.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

File Number 4053.2

3-83

12 3 4 5 6 7 8

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与FSS234D相关器件

型号	品牌	获取价格	描述	数据表
FSS234D1	INTERSIL	获取价格	6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS234D3	INTERSIL	获取价格	6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS234D4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 6A I(D) \| TO-257AA
FSS234R	INTERSIL	获取价格	6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS234R1	INTERSIL	获取价格	6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS234R3	INTERSIL	获取价格	6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS234R3	INFINEON	获取价格	Power Field-Effect Transistor, 6A I(D), 250V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal
FSS234R4	INFINEON	获取价格	Power Field-Effect Transistor, 6A I(D), 250V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal
FSS234R4	INTERSIL	获取价格	6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS237	ETC	获取价格

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