Datasheet > FSS234R1

FSS234R1

更新时间： 2024-11-25 22:48:55

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	48K
描述
6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

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FSS234R1 数据手册

FSS234D, FSS234R

6A, 250V, 0.600 Ohm, Rad Hard,

SEGR Resistant, N-Channel Power MOSFETs

June 1998

Features

Description

• 6A, 250V, r

• Total Dose

= 0.600Ω

The Discrete Products Operation of Intersil Corporation has

developed a series of Radiation Hardened MOSFETs speciﬁ-

cally designed for commercial and military space applications.

DS(ON)

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

Enhanced Power MOSFET immunity to Single Event Effects

(SEE), Single Event Gate Rupture (SEGR) in particular, is

combined with 100K RADS of total dose hardness to provide

devices which are ideally suited to harsh space environments.

The dose rate and neutron tolerance necessary for military

applications have not been sacriﬁced.

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm with

up to 80% of Rated Breakdown and

of 10V Off-Bias

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

DSS

- Typically Survives 2E12 if Current Limited to I

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS) struc-

ture. It is specially designed and processed to be radiation

tolerant. The MOSFET is well suited for applications exposed

to radiation environments such as switching regulation,

switching converters, motor drives, relay drivers and drivers

for high-power bipolar switching transistors requiring high

speed and low gate drive power. This type can be operated

directly from integrated circuits.

• Photo Current

- 4.0nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Speciﬁcations

for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K

Commercial

TXV

FSS234D1

FSS234D3

FSS234R1

FSS234R3

FSS234R4

10K

Symbol

100K

Commercial

TXV

Space

Formerly available as type TA17638.

Package

TO-257AA

CAUTION: Beryllia Warning per MIL-S-19500

refer to package speciﬁcations.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

File Number 4053.2

3-83

12 3 4 5 6 7 8

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与FSS234R1相关器件

型号	品牌	获取价格	描述	数据表
FSS234R3	INTERSIL	获取价格	6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS234R3	INFINEON	获取价格	Power Field-Effect Transistor, 6A I(D), 250V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal
FSS234R4	INFINEON	获取价格	Power Field-Effect Transistor, 6A I(D), 250V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal
FSS234R4	INTERSIL	获取价格	6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS237	ETC	获取价格
FSS238	SANYO	获取价格	Load Switching Applications
FSS239	SANYO	获取价格	Load Switching Applications
FSS23A0D	INTERSIL	获取价格	9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSS23A0D1	FAIRCHILD	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.33ohm, 1-Element, N-Channel, Silicon, Meta
FSS23A0D1	INTERSIL	获取价格	9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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