Datasheet > FSS237

FSS237

更新时间： 2024-11-25 23:52:59

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中文翻译

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数据手册

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FSS237 数据手册

Ordering number:ENN6149

N-Channel Silicon MOSFET

FSS237

Load Switching Applications

Features

Package Dimensions

unit:mm

· Ultralow ON resistance.

· 2.5V drive.

2116

[FSS237]

1 : Source

2 : Source

3 : Source

4 : Gate

0.2

5.0

5 : Drain

6 : Drain

7 : Drain

8 : Drain

1.27

0.595

0.43

Specifications

SANYO : SOP8

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Drain-to-Source Voltage

Symbol

Conditions

Ratings

Unit

±10

DSS

Gate-to-Source Voltage

Drain Current (DC)

GSS

Drain Current (pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

PW≤10µs, duty cycle≤1%

Mounted on a ceramic board (1200mm²×0.8mm)

Tch

2.0

150

˚C

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

=1mA, V =0

D GS

µA

(BR)DSS

=20V, V =0

DSS

=±8V, V =0

=10V, I =1mA

=10V, I =14A

±10

1.3

GSS

0.4

GS(off)

| yfs |

Forward Transfer Admittance

=14A, V =4V

6.5

mΩ

DS(on)

Static Drain-to-Source On-State Resistance

=7A, V =2.5V

D GS

DS(on)

Ciss

Input Capacitance

=10V, f=1MHz

5100

1400

950

Output Capacitance

Reverse Transfer Capacitance

Marking : S237

Coss

Crss

=10V, f=1MHz

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

D1099TS (KOTO) TA-2286 No.6149-1/4

12 3 4

中文翻译

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与FSS237相关器件

型号	品牌	获取价格	描述	数据表
FSS238	SANYO	获取价格	Load Switching Applications
FSS239	SANYO	获取价格	Load Switching Applications
FSS23A0D	INTERSIL	获取价格	9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSS23A0D1	FAIRCHILD	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.33ohm, 1-Element, N-Channel, Silicon, Meta
FSS23A0D1	INTERSIL	获取价格	9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSS23A0D3	INTERSIL	获取价格	9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSS23A0D3	FAIRCHILD	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.33ohm, 1-Element, N-Channel, Silicon, Meta
FSS23A0R	INTERSIL	获取价格	9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSS23A0R1	INTERSIL	获取价格	9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSS23A0R1	FAIRCHILD	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.33ohm, 1-Element, N-Channel, Silicon, Meta

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