FS10VS-6

更新时间： 2024-11-22 22:48:55

品牌	Logo	应用领域
POWEREX		晶体开关晶体管功率场效应晶体管脉冲
页数	文件大小	规格书
4页	50K
描述
Nch POWER MOSFET HIGH-SPEED SWITCHING USE

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中文翻译

获取价格

数据手册

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FS10VS-6 数据手册

MITSUBISHI Nch POWER MOSFET

FS10VS-6

HIGH-SPEED SWITCHING USE

FS10VS-6

OUTLINE DRAWING

Dimensions in mm

10.5MAX.

4.5

1.3

+0.3

–0

0.5

0.8

w e

w r

q GATE

w DRAIN

e SOURCE

r DRAIN

¡VDSS ................................................................................ 300V

¡rDS (ON) (MAX) .............................................................. 0.68Ω

¡ID ..........................................................................................10A

TO-220S

APPLICATION

SMPS, DC-DC Converter, battery charger, power

supply of printer, copier, HDD, FDD, TV, VCR, per-

sonal computer etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol

VDSS

VGSS

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Conditions

Ratings

Unit

VGS = 0V

VDS = 0V

300

±30

IDM

Drain current (Pulsed)

Maximum power dissipation

Channel temperature

Storage temperature

Weight

°C

Tch

–55 ~ +150

1.2

Tstg

—

Typical value

Feb.1999

12 3 4

中文翻译

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与FS10VS-6相关器件

型号	品牌	获取价格	描述	数据表
FS10VS9	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 450V V(BR)DSS \| 10A I(D) \| TO-263AB
FS10VS-9	MITSUBISHI	获取价格	HIGH-SPEED SWITCHING USE
FS10VS-9	POWEREX	获取价格	Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS10VS-9	RENESAS	获取价格	MITSUBISHI Nch POWER MOSFET
FS10VS-9A	RENESAS	获取价格	High-Speed Switching Use Nch Power MOS FET
FS10VS-9A-T11	RENESAS	获取价格	High-Speed Switching Use Nch Power MOS FET
FS10VSH03	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 10A I(D) \| TO-263AB
FS10VSH-03-T2	MITSUBISHI	获取价格	Power Field-Effect Transistor, 10A I(D), 30V, 0.141ohm, 1-Element, N-Channel, Silicon, Met
FS10VSH06	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 10A I(D) \| TO-263AB
FS10VSH-06	POWEREX	获取价格	Power Field-Effect Transistor, 10A I(D), 60V, 0.073ohm, 1-Element, N-Channel, Silicon, Met