生命周期: | Obsolete | 零件包装代码: | TO-220S |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 10 A | 最大漏源导通电阻: | 0.141 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 40 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FS10VSH06 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-263AB | |
FS10VSH-06 | POWEREX |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 60V, 0.073ohm, 1-Element, N-Channel, Silicon, Met | |
FS10VSH-06 | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Met | |
FS10VSH-06-T1 | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Met | |
FS10VSH-06-T2 | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Met | |
FS10VSH2 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 10A I(D) | TO-263AB | |
FS10VSH-2 | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Met | |
FS10VSH-2-T1 | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Met | |
FS10VSH-2-T2 | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Met | |
FS10VSH3 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 10A I(D) | TO-263AB |