FS10VSJ-06

更新时间： 2024-11-10 22:15:23

品牌	Logo	应用领域
POWEREX		晶体开关晶体管功率场效应晶体管
页数	文件大小	规格书
4页	46K
描述
Nch POWER MOSFET HIGH-SPEED SWITCHING USE

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中文翻译

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数据手册

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FS10VSJ-06 数据手册

MITSUBISHI Nch POWER MOSFET

FS10VSJ-06

HIGH-SPEED SWITCHING USE

FS10VSJ-06

OUTLINE DRAWING

Dimensions in mm

10.5MAX.

4.5

1.3

+0.3

–0

0.5

0.8

w e

w r

q GATE

¡4V DRIVE

w DRAIN

e SOURCE

r DRAIN

¡VDSS .................................................................................. 60V

¡rDS (ON) (MAX) .............................................................. 70mΩ

¡ID ......................................................................................... 10A

¡Integrated Fast Recovery Diode (TYP.) ............. 55ns

TO-220S

APPLICATION

Motor control, Lamp control, Solenoid control

DC-DC converter, etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol

VDSS

VGSS

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Conditions

Ratings

Unit

VGS = 0V

VDS = 0V

±20

IDM

IDA

Drain current (Pulsed)

Avalanche drain current (Pulsed) L = 100µH

Source current

ISM

Source current (Pulsed)

Maximum power dissipation

Channel temperature

°C

Tch

–55 ~ +150

1.2

Tstg

—

Storage temperature

Weight

Typical value

Feb.1999

12 3 4

中文翻译

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与FS10VSJ-06相关器件

型号	品牌	获取价格	描述	数据表
FS10VSJ-06-T1	MITSUBISHI	获取价格	Power Field-Effect Transistor, 10A I(D), 60V, 0.091ohm, 1-Element, N-Channel, Silicon, Met
FS10VSJ-06-T2	MITSUBISHI	获取价格	Power Field-Effect Transistor, 10A I(D), 60V, 0.091ohm, 1-Element, N-Channel, Silicon, Met
FS10VSJ2	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 10A I(D) \| TO-263AB
FS10VSJ-2	MITSUBISHI	获取价格	HIGH-SPEED SWITCHING USE
FS10VSJ-2	POWEREX	获取价格	Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS10VSJ-2	RENESAS	获取价格	MITSUBISHI Nch POWER MOSFET
FS10VSJ-2-T1	MITSUBISHI	获取价格	Power Field-Effect Transistor, 10A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Met
FS10VSJ3	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 10A I(D) \| TO-263AB
FS10VSJ-3	POWEREX	获取价格	Power Field-Effect Transistor, 10A I(D), 150V, 0.16ohm, 1-Element, N-Channel, Silicon, Met
FS10VSJ-3	MITSUBISHI	获取价格	Power Field-Effect Transistor, 10A I(D), 150V, 0.16ohm, 1-Element, N-Channel, Silicon, Met