Datasheet > FS10VS-9A

FS10VS-9A

更新时间： 2024-11-11 07:00:11

品牌	Logo	应用领域
瑞萨 - RENESAS		开关
页数	文件大小	规格书
7页	201K
描述
High-Speed Switching Use Nch Power MOS FET

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数据手册

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FS10VS-9A 数据手册

FS10VS-9A

High-Speed Switching Use

Nch Power MOS FET

REJ03G0268-0100

Under development

Rev.1.00

Aug.20.2004

Features

•

Drive voltage : 10 V

_DSS: 450 V

_{DS(ON) (max)}: 0.73 Ω

I_D: 10 A

Outline

LDPAK(S)-1

2, 4

1. Gate

2. Drain

3. Source

4. Drain

Applications

DC-DC, PDP, lamp ballast, etc.

Maximum Ratings

(Tc = 25°C)

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

450

±30

Unit

Conditions

V_GS= 0 V

V_DS= 0 V

Drain current (Pulsed)

Avalanche current

Maximum power dissipation

Channel temperature

Storage temperature

Mass

I_DM

I_DA

L = 200 µH

P_D

100

°C

Tch

Tstg

—

– 55 to +150

1.2

Typical value

Rev.1.00, Aug.20.2004, page 1 of 6

12 3 4 5 6 7

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与FS10VS-9A相关器件

型号	品牌	获取价格	描述	数据表
FS10VS-9A-T11	RENESAS	获取价格	High-Speed Switching Use Nch Power MOS FET
FS10VSH03	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 10A I(D) \| TO-263AB
FS10VSH-03-T2	MITSUBISHI	获取价格	Power Field-Effect Transistor, 10A I(D), 30V, 0.141ohm, 1-Element, N-Channel, Silicon, Met
FS10VSH06	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 10A I(D) \| TO-263AB
FS10VSH-06	POWEREX	获取价格	Power Field-Effect Transistor, 10A I(D), 60V, 0.073ohm, 1-Element, N-Channel, Silicon, Met
FS10VSH-06	MITSUBISHI	获取价格	Power Field-Effect Transistor, 10A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Met
FS10VSH-06-T1	MITSUBISHI	获取价格	Power Field-Effect Transistor, 10A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Met
FS10VSH-06-T2	MITSUBISHI	获取价格	Power Field-Effect Transistor, 10A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Met
FS10VSH2	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 10A I(D) \| TO-263AB
FS10VSH-2	MITSUBISHI	获取价格	Power Field-Effect Transistor, 10A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Met