FS10VS-12

更新时间： 2024-11-25 22:08:31

品牌	Logo	应用领域
POWEREX		晶体开关晶体管功率场效应晶体管脉冲
页数	文件大小	规格书
4页	49K
描述
Nch POWER MOSFET HIGH-SPEED SWITCHING USE

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中文翻译

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数据手册

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FS10VS-12 数据手册

MITSUBISHI Nch POWER MOSFET

FS10VS-12

HIGH-SPEED SWITCHING USE

FS10VS-12

OUTLINE DRAWING

Dimensions in mm

10.5MAX.

4.5

1.3

+0.3

–0

0.5

0.8

w e

w r

q GATE

w DRAIN

e SOURCE

r DRAIN

¡VDSS ................................................................................ 600V

¡rDS (ON) (MAX) .............................................................. 0.94Ω

¡ID ..........................................................................................10A

TO-220S

APPLICATION

SMPS, DC-DC Converter, battery charger, power

supply of printer, copier, HDD, FDD, TV, VCR, per-

sonal computer etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol

VDSS

VGSS

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Conditions

Ratings

Unit

VGS = 0V

VDS = 0V

600

±30

IDM

Drain current (Pulsed)

Maximum power dissipation

Channel temperature

Storage temperature

Weight

150

°C

Tch

–55 ~ +150

1.2

Tstg

—

Typical value

Feb.1999

12 3 4

中文翻译

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与FS10VS-12相关器件

型号	品牌	获取价格	描述	数据表
FS10VS-12-T1	MITSUBISHI	获取价格	Power Field-Effect Transistor, 10A I(D), 600V, 0.94ohm, 1-Element, N-Channel, Silicon, Met
FS10VS-12-T2	MITSUBISHI	获取价格	Power Field-Effect Transistor, 10A I(D), 600V, 0.94ohm, 1-Element, N-Channel, Silicon, Met
FS10VS14A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 700V V(BR)DSS \| 10A I(D) \| TO-263AB
FS10VS-14A	MITSUBISHI	获取价格	HIGH-SPEED SWITCHING USE
FS10VS-14A	POWEREX	获取价格	Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS10VS-14A-T1	MITSUBISHI	获取价格	Power Field-Effect Transistor, 10A I(D), 700V, 1.3ohm, 1-Element, N-Channel, Silicon, Meta
FS10VS2	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 10A I(D) \| TO-263AB
FS10VS-2	POWEREX	获取价格	Power Field-Effect Transistor, 10A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Met
FS10VS-2	MITSUBISHI	获取价格	Power Field-Effect Transistor, 10A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Met
FS10VS-2-T2	MITSUBISHI	获取价格	Power Field-Effect Transistor, 10A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Met