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FQT7N10TF PDF预览

FQT7N10TF

更新时间： 2024-11-22 11:16:11
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
10页 780K
描述
功率 MOSFET，N 沟道，QFET®，100 V，1.7 A，350 mΩ，SOT-223

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中文翻译

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FQT7N10TF 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G4Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.91
雪崩能效等级（Eas）：50 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (Abs) (ID)：1.7 A最大漏极电流 (ID)：1.7 A
最大漏源导通电阻：0.35 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G4JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：4工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：2 W最大脉冲漏极电流 (IDM)：6.8 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FQT7N10TF 数据手册

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中文翻译

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FQT7N10TF 替代型号

型号 品牌 替代类型 描述 数据表
BSP373E6327 INFINEON

功能相似

 Power Field-Effect Transistor, 1.7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Met
BSP373L6327 INFINEON

功能相似

 Power Field-Effect Transistor, 1.7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Met
BSP373 INFINEON

功能相似

 SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)

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