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FQU12N20TU PDF预览

FQU12N20TU

更新时间： 2024-11-22 11:14:19
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管
页数 文件大小 规格书
11页 1059K
描述
N 沟道 QFET® MOSFET 200V, 9.0A, 280mΩ

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中文翻译

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FQU12N20TU 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：IN-LINE, R-PSIP-T3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.98
雪崩能效等级（Eas）：210 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：200 V最大漏极电流 (Abs) (ID)：9 A
最大漏极电流 (ID)：9 A最大漏源导通电阻：0.28 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-251
JESD-30 代码：R-PSIP-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：55 W
最大脉冲漏极电流 (IDM)：36 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FQU12N20TU 数据手册

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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers  
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中文翻译

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FQU12N20TU 替代型号

型号 品牌 替代类型 描述 数据表
FQU12N20 FAIRCHILD

功能相似

 200V N-Channel MOSFET

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FQU13N06LTU FAIRCHILD

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 		N-Channel QFET® MOSFET 60V, 11A, 115mΩ, TO251 (IPAK) MOLDED,3 LEAD, 5040
FQU13N06LTU ONSEMI

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 		功率 MOSFET，N 沟道，逻辑电平，QFET®，60 V，11 A，115 mΩ，IP
FQU13N06LTU_WS FAIRCHILD

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 		Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Met
FQU13N06LTU-WS ONSEMI

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 		功率 MOSFET，N 沟道，逻辑电平，QFET®，60 V，11 A，115 mΩ，IP

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