是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | IPAK-3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 0.96 | 雪崩能效等级(Eas): | 210 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (Abs) (ID): | 7.8 A | 最大漏极电流 (ID): | 7.8 A |
最大漏源导通电阻: | 0.36 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 50 W | 最大脉冲漏极电流 (IDM): | 31.2 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
FQU10N20TU | FAIRCHILD |
功能相似 |
Power Field-Effect Transistor, 7.6A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Me | |
FQU10N20CTU | FAIRCHILD |
功能相似 |
N-Channel QFET® MOSFET 200V, 7.8A, 360mΩ, TO251 (IPAK) MOLDED,3 LEAD, 50 | |
FQU10N20 | FAIRCHILD |
功能相似 |
200V N-Channel MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQU10N20L | FAIRCHILD |
获取价格 |
200V LOGIC N-Channel MOSFET | |
FQU10N20LTU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Me | |
FQU10N20TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 7.6A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Me | |
FQU10N20TU | ROCHESTER |
获取价格 |
7.6A, 200V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 | |
FQU11P06 | FAIRCHILD |
获取价格 |
60V P-Channel MOSFET | |
FQU11P06_09 | FAIRCHILD |
获取价格 |
60V P-Channel MOSFET | |
FQU11P06TU | FAIRCHILD |
获取价格 |
P-Channel QFET® MOSFET -60V, -9.4A, 185mΩ, TO251 (IPAK) MOLDED,3 LEAD, 5 | |
FQU11P06TU | ONSEMI |
获取价格 |
功率 MOSFET,P 沟道,QFET®,-60 V,-9.4 A,185 mΩ,IPAK | |
FQU11P06TU | ROCHESTER |
获取价格 |
9.4A, 60V, 0.185ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 | |
FQU12N20 | FAIRCHILD |
获取价格 |
200V N-Channel MOSFET |