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FQI9P25 PDF预览

FQI9P25

更新时间: 2024-09-29 22:25:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
9页 576K
描述
250V P-Channel MOSFET

FQI9P25 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-262AA包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.92
其他特性:FAST SWITCHING, AVALANCHE RATED雪崩能效等级(Eas):650 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:250 V
最大漏极电流 (Abs) (ID):9.4 A最大漏极电流 (ID):9.4 A
最大漏源导通电阻:0.62 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):120 W最大脉冲漏极电流 (IDM):37.6 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FQI9P25 数据手册

 浏览型号FQI9P25的Datasheet PDF文件第2页浏览型号FQI9P25的Datasheet PDF文件第3页浏览型号FQI9P25的Datasheet PDF文件第4页浏览型号FQI9P25的Datasheet PDF文件第5页浏览型号FQI9P25的Datasheet PDF文件第6页浏览型号FQI9P25的Datasheet PDF文件第7页 
December 2000  
TM  
QFET  
FQB9P25 / FQI9P25  
250V P-Channel MOSFET  
General Description  
Features  
These P-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
-9.4A, -250V, R  
= 0.62@V = -10 V  
DS(on) GS  
Low gate charge ( typical 29 nC)  
Low Crss ( typical 27 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
This advanced technology is especially tailored to minimize  
on-state  
resistance,  
provide  
superior  
switching  
performance, and withstand a high energy pulse in the  
avalanche and commutation modes. These devices are  
well suited for high efficiency switching DC/DC converters.  
S
!
D
G!  
G
S
D2-PAK  
FQB Series  
I2-PAK  
FQI Series  
G
D
S
!
D
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQB9P25 / FQI9P25  
Units  
V
V
I
Drain-Source Voltage  
-250  
-9.4  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
-5.9  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
-37.6  
± 30  
A
DM  
V
E
I
Gate-Source Voltage  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
650  
mJ  
A
-9.4  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
12  
mJ  
V/ns  
W
AR  
dv/dt  
-5.5  
Power Dissipation (T = 25°C) *  
3.13  
P
A
D
Power Dissipation (T = 25°C)  
120  
W
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.96  
W/°C  
°C  
T , T  
-55 to +150  
J
STG  
Maximum lead temperature for soldering purposes,  
1/8from case for 5 seconds  
T
300  
°C  
L
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
1.04  
40  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
θJA  
--  
--  
62.5  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2000 Fairchild Semiconductor International  
Rev. A2, December 2000  

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