FQN1N60C

更新时间： 2024-09-29 21:53:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	678K
描述
600V N-Channel MOSFET

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中文翻译

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数据手册

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FQN1N60C 数据手册

QFET

FQN1N60C

600V N-Channel MOSFET

Features

Description

•

0.3 A, 600 V, R

= 11.5 Ω @ V = 10 V

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficiency switched mode power supplies, active power factor

correction, electronic lamp ballasts based on half bridge

topology.

DS(on)

Low gate charge ( typical 4.8 nC )

Low Crss ( typical 3.5 pF)

Fast switching

100 % avalanche tested

Improved dv/dt capability

●

◀

▲

●

TO-92

SSN Series

G D S

Absolute Maximum Ratings

Symbol

Parameter

FQN1N60C

Units

Drain-Source Voltage

600

0.3

DSS

Drain Current

- Continuous (T = 25°C)

- Continuous (T = 100°C)

0.18

1.2

Drain Current

- Pulsed

(Note 1)

Gate-Source Voltage

± 30

GSS

Single Pulsed Avalanche Energy

Avalanche Current

(Note 2)

(Note 1)

(Note 3)

0.3

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

0.3

V/ns

dv/dt

4.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.02

-55 to +150

300

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

Units

°C/W

Thermal Resistance, Junction-to-Lead

Thermal Resistance, Junction-to-Ambient

(Note 6a)

(Note 6b)

θJL

θJA

140

°C/W

FQN1N60C Rev. A

www.fairchildsemi.com

12 3 4 5 6 7 8

中文翻译

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