是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | CYLINDRICAL, O-PBCY-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
Factory Lead Time: | 6 weeks | 风险等级: | 0.97 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 500 V | 最大漏极电流 (Abs) (ID): | 0.38 A |
最大漏极电流 (ID): | 0.38 A | 最大漏源导通电阻: | 6 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 40 pF |
JEDEC-95代码: | TO-92 | JESD-30 代码: | O-PBCY-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2.08 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQN1N60C | FAIRCHILD |
获取价格 |
600V N-Channel MOSFET | |
FQN1N60CBU | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 0.3A I(D), 600V, 1-Element, N-Channel, Silicon, Meta | |
FQN1N60CBU | ROCHESTER |
获取价格 |
300mA, 600V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, LEAD FREE, TO-92, 3 PIN | |
FQN1N60CTA | ROCHESTER |
获取价格 |
300mA, 600V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, LEAD FREE, TO-92, 3 PIN | |
FQN1N60CTA | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,QFET®,600 V,0.3 A,11.5 Ω,TO-92 | |
FQNL1N50B | FAIRCHILD |
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500V N-Channel MOSFET | |
FQNL1N50BBU | FAIRCHILD |
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Power Field-Effect Transistor, 0.27A I(D), 500V, 9ohm, 1-Element, N-Channel, Silicon, Meta | |
FQNL1N50BTA | FAIRCHILD |
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Power Field-Effect Transistor, 0.27A I(D), 500V, 9ohm, 1-Element, N-Channel, Silicon, Meta | |
FQNL2N50B | FAIRCHILD |
获取价格 |
500V N-Channel MOSFET | |
FQNL2N50BBU | ROCHESTER |
获取价格 |
0.35A, 500V, 5.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92L, 3 PIN |