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FQI4N90TU PDF预览

FQI4N90TU

更新时间： 2024-11-05 11:12:47
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管
页数 文件大小 规格书
10页 897K
描述
N 沟道 QFET® MOSFET 900V，4.2A，3.3Ω

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中文翻译

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FQI4N90TU 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：IN-LINE, R-PSIP-T3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：4 weeks风险等级：1.55
雪崩能效等级（Eas）：570 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：900 V最大漏极电流 (Abs) (ID)：4.2 A
最大漏极电流 (ID)：4.2 A最大漏源导通电阻：3.3 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-262AA
JESD-30 代码：R-PSIP-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：140 W
最大脉冲漏极电流 (IDM)：16.8 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FQI4N90TU 数据手册

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Is Now Part of  
To learn more about ON Semiconductor, please visit our website at  
www.onsemi.com  
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers  
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor  
product management systems do not have the ability to manage part nomenclature that utilizes an underscore  
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain  
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated  
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please  
email any questions regarding the system integration to Fairchild_questions@onsemi.com.  
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number  
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right  
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
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中文翻译

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与FQI4N90TU相关器件

型号 品牌 获取价格 描述 数据表
FQI4N90TU_NL FAIRCHILD

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 		Power Field-Effect Transistor, 4.2A I(D), 900V, 3.3ohm, 1-Element, N-Channel, Silicon, Met
FQI4P25 FAIRCHILD

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 		250V P-Channel MOSFET
FQI4P25TU FAIRCHILD

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 		Power Field-Effect Transistor, 4A I(D), 250V, 2.1ohm, 1-Element, P-Channel, Silicon, Metal
FQI4P40 FAIRCHILD

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 		400V P-Channel MOSFET
FQI4P40TU FAIRCHILD

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 		Power Field-Effect Transistor, 3.5A I(D), 400V, 3.1ohm, 1-Element, P-Channel, Silicon, Met
FQI50N06 FAIRCHILD

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 		60V N-Channel MOSFET
FQI50N06L FAIRCHILD

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 		60V LOGIC N-Channel MOSFET
FQI50N06LTU ROCHESTER

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 		52.4A, 60V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3
FQI50N06TU FAIRCHILD

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 		N-Channel QFET® MOSFET 60V, 50A, 22mΩ, 3LD, TO262, JEDEC VARIATION AA (I
FQI50N06TU ONSEMI

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 		N 沟道 QFET® MOSFET 60V，50A，22mΩ

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