Datasheet > FQI55N06

FQI55N06

更新时间： 2024-11-03 22:17:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	603K
描述
60V N-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FQI55N06 数据手册

May 2001

QFET

FQB55N06 / FQI55N06

60V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as automotive, DC/

DC converters, and high efficiency switching for power

management in portable and battery operated products.

•

55A, 60V, R

= 0.020Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 35 nC)

Low Crss ( typical 85 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

175°C maximum junction temperature rating

! "

D²-PAK

FQB Series

I²-PAK

FQI Series

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQB55N06 / FQI55N06

Units

Drain-Source Voltage

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

38.9

220

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 25

545

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

13.3

7.0

V/ns

dv/dt

Power Dissipation (T = 25°C) *

3.75

133

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.89

-55 to +175

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

1.13

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A1. May 2001

12 3 4 5 6 7...9

中文翻译

下载PDF

与FQI55N06相关器件

型号	品牌	获取价格	描述	数据表
FQI55N10	FAIRCHILD	获取价格	100V N-Channel MOSFET
FQI55N10TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 55A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Me
FQI58N08	FAIRCHILD	获取价格	80V N-Channel MOSFET
FQI58N08TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 57.5A I(D), 80V, 0.024ohm, 1-Element, N-Channel, Silicon, M
FQI5N15	FAIRCHILD	获取价格	150V N-Channel MOSFET
FQI5N15TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 5.4A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
FQI5N20	FAIRCHILD	获取价格	200V N-Channel MOSFET
FQI5N20L	FAIRCHILD	获取价格	200V LOGIC N-Channel MOSFET
FQI5N20LTU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4.5A I(D), 200V, 1.25ohm, 1-Element, N-Channel, Silicon, Me
FQI5N20TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4.5A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met