Datasheet > FPD200P70

FPD200P70

更新时间： 2024-02-26 17:57:12

品牌	Logo	应用领域
FILTRONIC		晶体晶体管放大器
页数	文件大小	规格书
3页	191K
描述
HI-FREQUENCY PACKAGED PHEMT

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技术参数
数据手册

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FPD200P70 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.21.00.95
风险等级：	5.76	最高工作温度：	175 °C
极性/信道类型：	N-CHANNEL	功耗环境最大值：	0.47 W
子类别：	FET RF Small Signal	Base Number Matches：	1

FPD200P70 数据手册

PRELIMINARY

FPD200P70

HI-FREQUENCY PACKAGED PHEMT

• PERFORMANCE

♦ 20 dBm Output Power (P_1dB

)

♦ 21 dB Power Gain (G_1dB) at 1.85 GHz

♦ 0.7 dB Noise Figure at 1.85 GHz

♦ 30 dBm Output IP3

♦ 50% Power-Added Efficiency at 1.85 GHz

♦ Useable Gain to 26 GHz

♦ Evaluation Boards Available

GATE LEAD IS ANGLED

• DESCRIPTION AND APPLICATIONS

The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron

Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 200 µm Schottky barrier Gate, defined by

high-resolution stepper-based photolithography. . The FPD200P70 is also available in die form .

Typical applications include gain blocks and medium power stages for applications to 26 GHz.

• ELECTRICAL SPECIFICATIONS AT 22°C

Parameter

Symbol

Test Conditions

Min

Typ

Max Units

RF SPECIFICATIONS MEASURED AT f = 1850 MHz USING CW SIGNAL (except as noted)

Power at 1dB Gain Compression

Gain at 1dB Gain Compression

Power-Added Efficiency

P_1dB

SSG

PAE

V_DS= 5 V; I_DS= 50% I_DSS

dBm

_DS= 5 V; I_DS= 50% I_DSS

;

_OUT= P_1dB

Maximum Stable Gain (S₂₁/S₁₂)

f = 12 GHz

f = 18 GHz

Noise Figure

Output Third-Order Intercept Point

MSG

_DS= 5 V; I_DS= 50% I_DSS

0.7

IP3

V_DS= 5 V; I_DS= 25% I_DSS

V_DS= 5V; I_DS= 50% I_DSS

dBm

_OUT= 9 dBm SCL

Saturated Drain-Source Current

Maximum Drain-Source Current

Transconductance

Gate-Source Leakage Current

Pinch-Off Voltage

Gate-Source Breakdown Voltage

Gate-Drain Breakdown Voltage

Thermal Resistivity (see Notes)

I_DSS

I_MAX

G_M

I_GSO

|V_P|

V_DS= 1.3 V; V_GS= 0 V

V_DS= 1.3 V; V_GS≅ +1 V

V_DS= 1.3 V; V_GS= 0 V

V_GS= -5 V

V_DS= 1.3 V; I_DS= 0.2 mA

I_GS= 0.2 mA

120

0.9

µA

°C/W

1.3

0.7

14.5

|V_BDGS

|V_BDGD

I_GD= 0.2 mA

325

_DS> 3V

θ_JC

Phone: +1 408 850-5790

Fax: +1 408 850-5766

http://www.filtrionic.co.uk/semis

Revised: 7/15/05

Email: sales@filcsi.com

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