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FPD2250

更新时间： 2024-01-21 01:26:18
品牌 Logo 应用领域
威讯 - RFMD 晶体晶体管放大器
页数 文件大小 规格书
4页 237K
描述
1.5W POWER pHEMT

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中文翻译

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FPD2250 技术参数

生命周期：Transferred包装说明：,
Reach Compliance Code：unknown风险等级：5.61
Base Number Matches：1

FPD2250 数据手册

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FPD22501.5W  
Power pHEMT  
FPD2250  
1.5W POWER pHEMT  
Package Style: Bare Die  
Product Description  
Features  
The FPD2250 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transis-  
tor (pHEMT), featuring a 0.25μmx2250μm Schottky barrier gate, defined by high-  
resolution stepper-based photolithography. The recessed gate structure minimizes  
parasitics to optimize performance. The epitaxial structure and processing have  
been optimized for reliable high-power applications. The FPD2250 is also available  
in the low-cost plastic SOT89 package.  
„
32dBm Linear Output Power  
at 12GHz  
„
„
7.5dB Power Gain at 12GHz  
42dBm O  
IP3  
„
45% Power-Added Efficiency  
Applications  
Optimum Technology  
Matching® Applied  
„
Narrowband and Broadband  
High-Performance Amplifiers  
GaAs HBT  
GaAs MESFET  
InGaP HBT  
SiGe BiCMOS  
Si BiCMOS  
SiGe HBT  
„
„
SATCOM Uplink Transmitters  
PCS/Cellular Low-Voltage  
High-Efficiency Output Ampli-  
fiers  
„
Medium-Haul Digital Radio  
Transmitters  
GaAs pHEMT  
9
Si CMOS  
Si BJT  
GaN HEMT  
InP HBT  
RF MEMS  
LDMOS  
Specification  
Parameter  
Unit  
Condition  
Min.  
Typ.  
Max.  
Electrical Specifications  
P
Gain Compression  
31.0  
8.0  
32.0  
9.0  
7.5  
dBm  
dB  
V
V
V
V
V
=8V, I =50% I  
DS  
1dB  
DS  
DS  
DS  
DS  
DS  
DSS  
DSS  
DSS  
Maximum Stable Gain (S21/S12)  
Power Gain at P (G  
=8V, I =50% I  
DS  
)
6.5  
dB  
=8V, I =50% I  
DS  
1dB 1dB  
Power-Added Efficiency (PAE)  
OIP  
45  
%
=8V, I =50% I , P =P  
DS  
DSS  
OUT  
1dB  
40  
dBm  
dBm  
mA  
mA  
=8V, I =50% I  
DS  
3
DSS  
42  
Matched for optimal power, tuned for best IP  
3
Saturated Drain-Source Current (I  
Maximum Drain-Source Current  
)
560  
700  
1125  
825  
V
V
=1.3V, V =0V  
DSS  
DS  
DS  
GS  
=1.3V, V ≈+1V  
GS  
(I  
)
MAX  
Transconductance (G )  
600  
10  
ms  
μA  
V
V
V
V
=1.3V, V =0V  
M
DS  
GS  
DS  
GS  
Gate-Source Leakage Current (I  
)
=-5V  
GSO  
Pinch-Off Voltage (V )  
|1.0|  
|14.0|  
=1.3V, I =2.25mA  
DS  
P
Gate-Source Breakdown Voltage  
(V  
|12.0|  
|14.5|  
V
I
=2.25mA  
=2.25mA  
>6V  
GS  
)
BDGS  
Gate-Drain Breakdown Voltage  
(V  
|16.0|  
30  
V
I
GD  
)
BDGD  
Thermal Resistivity (θJC)  
Note: T  
°C/W  
V
DS  
=22°C, RF specifications measured at f=12GHz using CW signal.  
AMBIENT  
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
Rev A1 DS090612  
1 of 4  
1234

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