Datasheet > FPD3000P100

FPD3000P100

更新时间： 2022-11-25 13:17:57

品牌	Logo	应用领域
FILTRONIC		/
页数	文件大小	规格书
3页	183K
描述
2W PACKAGED POWER PHEMT

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FPD3000P100 数据手册

FPD3000P100

2W PACKAGED POWER PHEMT

• FEATURES

♦ 32.5 dBm Linear Output Power

♦ 17 dB Power Gain at 2 GHz

♦ 9.5 dB Maximum Stable Gain at 10 GHz

♦ 42 dBm Output IP3

♦ 45% Power-Added Efficiency at 2 GHz

• DESCRIPTION AND APPLICATIONS

The FPD3000P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility

Transistor (PHEMT), featuring a 0.25 µm by 3000 µm Schottky barrier gate, defined by high-

resolution stepper-based photolithography. The recessed and offset Gate structure minimizes

parasitics to optimize performance. The epitaxial structure and processing have been optimized for

reliable high-power applications. The FPD3000P100 also features Si₃N₄passivation and is also

available in die form and in the low cost plastic SOT89 plastic package.

Typical applications include commercial and other narrowband and broadband high-performance

amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output

amplifiers, and medium-haul digital radio transmitters.

• ELECTRICAL SPECIFICATIONS AT 22°C

Parameter

Symbol

Test Conditions

Min

Typ

Max Units

UNLESS OTHERWISE NOTED, RF SPECIFICATIONS MEASURED AT f = 2 GHz USING CW SIGNAL

Power at 1dB Gain Compression

Power Gain at P_1dB

Maximum Stable Gain (S₂₁/S₁₂)

P_1dB

G_1dB

SSG

V_DS= 8 V; I_DS= 50% I_DSS

f = 2 GHz

31.0

16.5

32.5

17.0

dBm

20.5

8.5

21.5

9.5

f = 10 GHz

Power-Added Efficiency

PAE

IP3

V_DS= 8 V; I_DS= 50% I_DSS

;

P_OUT= P_1dB

Output Third-Order Intercept Point

V_DS= 8V; I_DS= 50% I_DSS

Matched for optimal power

(from 15 to 5 dB below P_1dB

)

dBm

Saturated Drain-Source Current

Maximum Drain-Source Current

Transconductance

Gate-Source Leakage Current

Pinch-Off Voltage

I_DSS

I_MAX

G_M

I_GSO

|V_P|

V_DS= 1.3 V; V_GS= 0 V

V_DS= 1.3 V; V_GS≅ +1 V

V_DS= 1.3 V; V_GS= 0 V

V_GS= -5 V

V_DS= 1.3 V; I_DS= 3 mA

I_GD= 3 mA

750

930

1.5

800

1.0

16.0

1110

µA

1.3

0.7

14.5

Gate-Drain Breakdown Voltage

Thermal Resistivity (see Notes)

|V_BDGD

_DS> 6V

θ_JC

°C/W

Phone: +1 408 850-5790

Fax: +1 408 850-5766

http://www.filtronic.co.uk/semis

Released: 6/27/05

Email: sales@filcsi.com

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